Thermally stable spin valve films with synthetic antiferromagnet pinned by NiMn for recording heads beyond 20 Gbit/in.2

2000 ◽  
Vol 87 (9) ◽  
pp. 5720-5722 ◽  
Author(s):  
Sining Mao ◽  
Anthony Mack ◽  
Eric Singleton ◽  
Jian Chen ◽  
Song S. Xue ◽  
...  
Keyword(s):  
Spin Valve ◽  
Thermally Stable ◽  
Synthetic Antiferromagnet ◽  
Recording Heads

Thermal stability and reliability of spin-valve films with synthetic antiferromagnet exchange-biased by IrMn

1999 ◽  
Author(s):  
H.N. Fuke ◽  
K. Saito ◽  
M. Yoshikawa ◽  
K. Koui ◽  
H. Iwasaki ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Spin Valve ◽  
Synthetic Antiferromagnet

Top, bottom, and dual spin valve recording heads with PdPtMn antiferromagnets

1999 ◽  
Vol 35 (2) ◽  
pp. 700-705 ◽  
Author(s):  
A. Tanaka ◽  
Y. Shimizu ◽  
H. Kishi ◽  
K. Nagasaka ◽  
H. Kanai ◽  
...  
Keyword(s):  
Spin Valve ◽  
Recording Heads

Enhancement of current-perpendicular-to-plane giant magnetoresistance by synthetic antiferromagnet free layers in single spin-valve films

2003 ◽  
Vol 83 (14) ◽  
pp. 2874-2876 ◽  
Author(s):  
Y. Jiang ◽  
S. Abe ◽  
T. Nozaki ◽  
N. Tezuka ◽  
K. Inomata
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Single Spin ◽  
Synthetic Antiferromagnet ◽  
Current Perpendicular To Plane

Spin-valve Structures For Recording Heads

2005 ◽  
Author(s):  
V.S. Speriosu ◽  
B.A. Gurney ◽  
R.E. Fontana ◽  
T. Lin ◽  
M.M. Dovek ◽  
...  
Keyword(s):  
Spin Valve ◽  
Recording Heads

The analysis of spin valve with the spin flop by a thickness difference in the synthetic antiferromagnet

2002 ◽  
Vol 239 (1-3) ◽  
pp. 179-181 ◽  
Author(s):  
S.H. Jang ◽  
T. Kang ◽  
H.J. Kim ◽  
K.Y. Kim
Keyword(s):  
Spin Valve ◽  
Synthetic Antiferromagnet

Thermally stable MnIr based spin valve type tunnel junction with nano-oxide layer over 400°C

2004 ◽  
Vol 110 (3) ◽  
pp. 265-267 ◽  
Author(s):  
S.Y Yoon ◽  
Y.I Kim ◽  
D.H Lee ◽  
Y.S Kim ◽  
D.H Yoon ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Tunnel Junction ◽  
Spin Valve ◽  
Thermally Stable ◽  
Nano Oxide

Magnetoresistive sensitivity and uniaxial anisotropy of spin-valve microstrips with a synthetic antiferromagnet

2017 ◽  
Vol 118 (5) ◽  
pp. 415-420 ◽  
Author(s):  
T. A. Chernyshova ◽  
M. A. Milyaev ◽  
L. I. Naumova ◽  
V. V. Proglyado ◽  
N. S. Bannikova ◽  
...  
Keyword(s):  
Spin Valve ◽  
Uniaxial Anisotropy ◽  
Synthetic Antiferromagnet ◽  
Magnetoresistive Sensitivity

Manufacturability of Gmr Heads: 10Gb/in2 and Beyond

2000 ◽  
Vol 614 ◽  
Author(s):  
S. Sahu ◽  
Jian Chen ◽  
V. Talghader ◽  
S. Cool ◽  
S. Mao
Keyword(s):  
Process Control ◽  
Sheet Resistance ◽  
Spin Valve ◽  
Single Layer ◽  
Theoretical Understanding ◽  
Reflection And Transmission ◽  
Model Calculations ◽  
Transmission Coefficients ◽  
Synthetic Antiferromagnet ◽  
Strong Indicator

ABSTRACTConsistency of spin-valve stack deposition, both wafer-to-wafer and within a wafer, is key to the manufacturability of GMR heads. For typical GMR heads, film thicknesses are now in the range of 5Å-150Å and process control is becoming a challenge.This paper discusses the importance of characterizing the thickness and uniformity of each material in the spin-valve stack within the context of single layer sheet films. For this study, single layer sheet films and full multilayer spin-valve stacks were deposited in a multi-target cluster tool. The sheet resistance and thickness of the single layer sheet films were measured using a 4-point probe and ellipsometry, respectively. Results were then correlated to the sheet resistance and magnetic performance (i.e., GMR ratio, exchange field, and magneto-static coupling field) of the full spin-valve stacks with a synthetic antiferromagnet as the pinned layer. The 1σ < 2% uniformity, wafer-to-wafer and within wafer, realized for the full stacks is a strong indicator of a manufacturable process.Model calculations of the sheet resistance and GMR were carried out to provide theoretical understanding of the film thickness dependence. The calculated results are well correlated with the experimental measurements. The model is based on band structures and implicitly includes the momentum-dependent reflection and transmission coefficients at the interfaces.Results from both experiments and calculations show that process control and repeatability (both within a wafer and from wafer to wafer) are crucial to the spin-valve manufacturability, offering a critical challenge to the disc drive industry as it heads into the next generation of GMR heads.

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