Baseline popping of spin-valve recording heads induced by ESD

2002 ◽  
Author(s):  
Yong Shen ◽  
R. Leung ◽  
J.Z.F. Sun
Keyword(s):  
Spin Valve ◽  
Recording Heads

Top, bottom, and dual spin valve recording heads with PdPtMn antiferromagnets

1999 ◽  
Vol 35 (2) ◽  
pp. 700-705 ◽  
Author(s):  
A. Tanaka ◽  
Y. Shimizu ◽  
H. Kishi ◽  
K. Nagasaka ◽  
H. Kanai ◽  
...  
Keyword(s):  
Spin Valve ◽  
Recording Heads

Spin-valve Structures For Recording Heads

2005 ◽  
Author(s):  
V.S. Speriosu ◽  
B.A. Gurney ◽  
R.E. Fontana ◽  
T. Lin ◽  
M.M. Dovek ◽  
...  
Keyword(s):  
Spin Valve ◽  
Recording Heads

Characterization of high density spin valve recording heads by novel magnetic force microscope

1999 ◽  
Vol 35 (5) ◽  
pp. 2625-2627 ◽  
Author(s):  
C.X. Qian ◽  
H.C. Tong ◽  
F.H. Liu ◽  
X. Shi ◽  
S. Dey ◽  
...  
Keyword(s):  
Magnetic Force ◽  
Spin Valve ◽  
High Density ◽  
Magnetic Force Microscope ◽  
Recording Heads

Recent Developments in Magnetic Recording Heads

2002 ◽  
Vol 746 ◽  
Author(s):  
Atsushi Tanaka ◽  
Mitsumasa Oshiki
Keyword(s):  
Spin Valve ◽  
Magnetic Head ◽  
Spin Filter ◽  
Scattering Layer ◽  
Specular Scattering ◽  
Recording Heads ◽  
Read Head ◽  
Recent Developments ◽  
Magnetic Recording Heads ◽  
Future Technologies

ABSTRACTRecently developed and future magnetic head technologies are reviewed. Scaling of dimensions brought about significant increases in recording densities in the last decade. On the recording head aspect, as the read head is narrowed, large improvements in sensitivity are required. Therefore, spin-valve read heads have been improved by introducing synthetic ferromagnetic pinned layers, a spin filter back layer and a specular scattering layer. The current perpendicular to plane (CPP) structure is now being adopted instead of the current in plane (CIP) structure which is the present magnetic head structure. Under heads with a CPP structure, tunneling magnetoresistance (TMR) devices and multilayer GMR are candidates. In CPP mode, we can make better use of “spintronics” or spin-dependent conduction phenomena because device character depends more directly on the spin-dependent electronic states of the materials. Future technologies of read head are also discussed.

Thermally stable spin valve films with synthetic antiferromagnet pinned by NiMn for recording heads beyond 20 Gbit/in.2

2000 ◽  
Vol 87 (9) ◽  
pp. 5720-5722 ◽  
Author(s):  
Sining Mao ◽  
Anthony Mack ◽  
Eric Singleton ◽  
Jian Chen ◽  
Song S. Xue ◽  
...  
Keyword(s):  
Spin Valve ◽  
Thermally Stable ◽  
Synthetic Antiferromagnet ◽  
Recording Heads

Junction edge instability in simple spin valve recording heads

2000 ◽  
Vol 36 (5) ◽  
pp. 2581-2583 ◽  
Author(s):  
E. Chen ◽  
D. Saunders ◽  
J. Fernandez-de-Castro
Keyword(s):  
Spin Valve ◽  
Recording Heads

Changes in Stress and Microstructure in PtMn/CoFe Bilayers during Annealing

2000 ◽  
Vol 615 ◽  
Author(s):  
S.P. Bozeman ◽  
B.J. Daniels ◽  
D.J. Larson
Keyword(s):  
Spin Valve ◽  
Rate Of Change ◽  
Film Stress ◽  
Face Centered Cubic ◽  
Thin Film Stress ◽  
Antiferromagnetic Materials ◽  
Recording Heads ◽  
Face Centered ◽  
Sputter Deposited ◽  
Magnetic Recording Heads

ABSTRACTPtMn is one of several candidate antiferromagnetic materials for biasing of spin valve giant magnetoresistive (GMR) sensors used in magnetic recording heads. The as-deposited crystal structure of PtMn is face-centered cubic, which is not antiferromagnetic, and it is commonly annealed to transform it to the ordered face-centered tetragonal structure, which is antiferromagnetic. The changes in the thin film stress during this transformation can be up to 1.5 GPa in magnitude. In this work, the stresses in sputter-deposited, PtMn/CoFe bilayers were measured during annealing using a laser-based wafer curvature technique. During annealing, the stress initially increases before approaching a constant level. This behavior was examined for samples with a range of PtMn compositions and varying degrees of PtMn {111} texture. Both the magnitude and rate of change of the stress are sensitive to the composition of the films, but are relatively insensitive to the film texture. These results are discussed in terms of the binary alloy phase diagram.

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