Accurate determination of a potential energy surface for CD3H

1989 ◽  
Vol 90 (6) ◽  
pp. 3198-3203 ◽  
Author(s):  
Christophe Iung ◽  
Claude Leforestier
2020 ◽  
Vol 365 (12) ◽  
Author(s):  
E. Sahnoun ◽  
M. Ben Khalifa ◽  
F. Khadri ◽  
K. Hammami

AbstractDespite that the tricarbon monosulfide (C3S) is among the first sulfur-containing carbon-chain molecules to be detected in the interstellar medium, no studies focused on the determination of its collisional rates. These rate coefficients are essential to estimate the abundance of C3S in the interstellar medium. Computations of the C3S($^{1}\Sigma^{+}$ Σ + 1 ) downward rate coefficients, induced by collision with He, are performed by averaging the integral cross sections at low temperature (below $25~\text{K}$ 25 K ). Calculations of the cross sections in the close-coupling quantum time independent formalism for $E_{c}\leq110~\text{cm}^{-1}$ E c ≤ 110 cm − 1 and $J\leq10$ J ≤ 10 are based on a new 2-D potential energy surface. This PES is obtained from the explicit correlated coupled cluster with a single, double and perturbative triple excitation [ccsd(t)-f12] ab initio approach and the aug-cc-pVTZ basis sets. The PES have a global minimum of $-55.69~\text{cm}^{-1}$ − 55.69 cm − 1 located at $R=6.25$ R = 6.25 bohr and $\theta=94^{\circ}$ θ = 94 ∘ , and a second minimum of $-36.95~\text{cm}^{-1}$ − 36.95 cm − 1 at $R=9.35$ R = 9.35 bohr and $\theta=0^{\circ}$ θ = 0 ∘ . A comparison of C3S rates with those of the isoelectronic molecule C3O was made. The results indicate a great temperature dependence of the rates for transitions of $\Delta J>2$ Δ J > 2 . We expect that the new collisional data will allow for accurate determination of the C3S abundance in several interstellar regions.


1999 ◽  
Vol 241 (1) ◽  
pp. 29-42 ◽  
Author(s):  
Alexandre Faure ◽  
Claire Rist ◽  
Pierre Valiron

2002 ◽  
Vol 116 (23) ◽  
pp. 10148-10163 ◽  
Author(s):  
N. Goldman ◽  
R. S. Fellers ◽  
M. G. Brown ◽  
L. B. Braly ◽  
C. J. Keoshian ◽  
...  

1997 ◽  
Vol 78 (20) ◽  
pp. 3900-3903 ◽  
Author(s):  
A. P. Graham ◽  
F. Hofmann ◽  
J. P. Toennies ◽  
L. Y. Chen ◽  
S. C. Ying

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