scholarly journals Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells

2012 ◽  
Vol 101 (12) ◽  
pp. 123904 ◽  
Author(s):  
M. Fehr ◽  
P. Simon ◽  
T. Sontheimer ◽  
C. Leendertz ◽  
B. Gorka ◽  
...  
2012 ◽  
Vol 21 (6) ◽  
pp. 1377-1383 ◽  
Author(s):  
Jonathon Dore ◽  
Rhett Evans ◽  
Ute Schubert ◽  
Bonne D. Eggleston ◽  
Daniel Ong ◽  
...  

Author(s):  
Ivan Gordon ◽  
Dries Van Gestel ◽  
Yu Qiu ◽  
Srisaran Venkatachalam ◽  
Guy Beaucarne ◽  
...  

2014 ◽  
Vol 1670 ◽  
Author(s):  
Joel B. Li ◽  
Bruce M. Clemens

ABSTRACTGrain boundaries (GBs) in polycrystalline silicon (poly-Si) thin film solar cells are frequently found to be detrimental for device performance. Biaxiallytextured silicon with grains that are well-aligned in-plane and out-of-plane can possess fewer GB defects. In this work, we use TCAD Sentaurus device simulator and known experimental work to investigate and quantify the potential performance gains of biaxially-textured silicon. Simulation shows there can be performance gain from well-aligned grains when GB defects dominate carrier recombination or when grains are small. On the other hand, when intra-grain defects dominate recombination and grains are large, well-aligned grains do not lead to much performance gain. Another important result from our simulation is when intra-grain and GB defects are few, Jsc is almost independent of grain size while Voc drops with decreasing grain size.


Author(s):  
Yu Qiu ◽  
Ozge Tuzun ◽  
Ivan Gordon ◽  
Srisaran Venkatachalam ◽  
Abdelilah Slaoui ◽  
...  

1997 ◽  
Vol 81 (11) ◽  
pp. 7635-7640 ◽  
Author(s):  
Mitsuru Imaizumi ◽  
Tadashi Ito ◽  
Masafumi Yamaguchi ◽  
Kyojiro Kaneko

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