Abstract
BaSi2 homojunction diodes on Nb-doped TiO2 (TiO2:Nb) coated glass substrates were fabricated using aluminum-induced crystallization (AIC) and two-step evaporation method. From Raman scattering spectra, the growth of BaSi2 on TiO2:Nb was confirmed when the thickness of poly-Si grown by AIC (AIC-Si) was more than 150 nm. The partial formation of BaSi2 diodes was confirmed from the samples prepared at temperature during AIC TAIC=475-525 oC. The long-wavelength edge of photoresponsivity of the diodes was located around 950 nm, which corresponds to the bandgap of BaSi2 of 1.3 eV, suggesting that this photocurrent is derived from BaSi2 thin films. At TAIC =500 oC, the maximum value of photoresponsivity was obtained. Since the largest grains in AIC-Si were also obtained at TAIC=500 oC, these results suggest that larger grain of AIC-Si leads to the improvement of the quality of BaSi2 thin films themselves and the performance of BaSi2 diodes.
