Transient gas flow studied by a test particle Monte Carlo approach with ProVac3D

2012 ◽  
Author(s):  
Xueli Luo ◽  
Thomas Giegerich ◽  
Christian Day
2009 ◽  
Vol 8 (3-4) ◽  
pp. 324-335 ◽  
Author(s):  
Damien Querlioz ◽  
Huu-Nha Nguyen ◽  
Jérôme Saint-Martin ◽  
Arnaud Bournel ◽  
Sylvie Galdin-Retailleau ◽  
...  

1998 ◽  
Vol 120 (2) ◽  
pp. 296-302 ◽  
Author(s):  
Masato Ikegawa ◽  
Jun’ichi Kobayashi ◽  
Morihisa Maruko

As integrated circuits are advancing toward smaller device features, step-coverage in submicron trenches and holes in thin film deposition are becoming of concern. Deposition consists of gas flow in the vapor phase and film growth in the solid phase. A deposition profile simulator using the direct simulation Monte Carlo method has been developed to investigate deposition profile characteristics on small trenches which have nearly the same dimension as the mean free path of molecules. This simulator can be applied to several deposition processes such as sputter deposition, and atmospheric- or low-pressure chemical vapor deposition. In the case of low-pressure processes such as sputter deposition, upstream boundary conditions of the trenches can be calculated by means of rarefied gas flow analysis in the reactor. The effects of upstream boundary conditions, molecular collisions, sticking coefficients, and surface migration on deposition profiles in the trenches were clarified.


2020 ◽  
Vol 219 ◽  
pp. 116945
Author(s):  
Vasilis Pagonis ◽  
Sebastian Kreutzer ◽  
Alex Roy Duncan ◽  
Ena Rajovic ◽  
Christian Laag ◽  
...  

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