Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates

2013 ◽  
Vol 113 (17) ◽  
pp. 173512 ◽  
Author(s):  
Kyu-Seung Lee ◽  
Isnaeni ◽  
Yang-Seok Yoo ◽  
Jae-Hoon Lee ◽  
Yong-Chun Kim ◽  
...  
Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.


2011 ◽  
Vol 4 (6) ◽  
pp. 062102 ◽  
Author(s):  
Chien-Chih Kao ◽  
Yan-Kuin Su ◽  
Yi-Ta Hsieh ◽  
Yung-Chun Lee ◽  
Chiao-Yang Cheng ◽  
...  

2003 ◽  
Vol 0 (7) ◽  
pp. 2253-2256 ◽  
Author(s):  
S. J. Chang ◽  
Y. K. Su ◽  
Y. C. Lin ◽  
R. W. Chuang ◽  
C. S. Chang ◽  
...  

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