In-situ mapping of electroluminescent enhancement of light-emitting diodes grown on patterned sapphire substrates

2017 ◽  
Vol 121 (5) ◽  
pp. 055705 ◽  
Author(s):  
Jung-Chieh Su ◽  
Chung-Hao Lee ◽  
Yi-Hsuan Huang ◽  
Henglong Yang
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography

2011 ◽  
Vol 4 (6) ◽  
pp. 062102 ◽  
Author(s):  
Chien-Chih Kao ◽  
Yan-Kuin Su ◽  
Yi-Ta Hsieh ◽  
Yung-Chun Lee ◽  
Chiao-Yang Cheng ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

2003 ◽  
Vol 0 (7) ◽  
pp. 2253-2256 ◽  
Author(s):  
S. J. Chang ◽  
Y. K. Su ◽  
Y. C. Lin ◽  
R. W. Chuang ◽  
C. S. Chang ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Mocvd Growth ◽  
Patterned Sapphire Substrates

scholarly journals Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Hsu-Hung Hsueh ◽  
Sin-Liang Ou ◽  
Chiao-Yang Cheng ◽  
Dong-Sing Wuu ◽  
Ray-Hua Horng
Keyword(s):  
Light Emitting Diodes ◽  
Substrate Surface ◽  
Light Output ◽  
Chemical Vapor ◽  
Wet Etching ◽  
Light Output Power ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching. Through the wet etching treatment, some dry-etched induced damage on the substrate surface formed in the PSS fabrication process can be removed to achieve a high epilayer quality. In comparison to the LEDs prepared on the conventional sapphire substrate (CSS) and cone-shaped PSS without wet etching, the LED grown on the cone-shaped PSS by performing wet etching for 3 min exhibited 55% and 10% improvements in the light output power (at 350 mA), respectively. This implies that the modification of cone-shaped PSSs possesses high potential for LED applications.

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