Semiconducting properties of amorphous GaZnSnO thin film based on combinatorial electronic structures

2014 ◽  
Vol 104 (18) ◽  
pp. 182106 ◽  
Author(s):  
B. K. Kim ◽  
J. S. Park ◽  
D. H. Kim ◽  
K. B. Chung
2010 ◽  
Vol 207 (7) ◽  
pp. 1731-1734 ◽  
Author(s):  
S. J. Wang ◽  
T. I. Wong ◽  
Q. Chen ◽  
M. Yang ◽  
L. M. Wong ◽  
...  

2011 ◽  
Vol 1 (SRMS-7) ◽  
Author(s):  
Yu-Zhan Wang ◽  
Xing-Yu Gao ◽  
Andrew Wee ◽  
Dong-Chen Qi ◽  
Shi Chen

We investigate the interfacial electronic structures of the heterojunction Fe/pentacene/Fe on Cu(100) substrate, using synchrotron-based photoemission spectroscopy. No chemical reaction is observed at either Fe/pentacene or pentacene/Fe interface. The hole injection barrier was estimated to be about 0.95 eV between pentacene and under the Fe thin film. C K-edge NEXAFS revealed that the long axis of pentacene molecule was almost perpendicular to the surface plane. With increasing Fe thickness deposited on pentacene film, the pentacene's HOMO shifts to higher binding energy whereas the C 1s binding energy showed an interesting unusual behaviour due to the initial band bending gradually suppressed by the increasing core-hole screening effect.


1976 ◽  
Vol 16 (1-2) ◽  
pp. 37-45 ◽  
Author(s):  
C. Corsi ◽  
G. Cappuccio ◽  
A. D'amico ◽  
G. Petrocco ◽  
G. Vitali

2008 ◽  
Vol 158 (21-24) ◽  
pp. 984-987 ◽  
Author(s):  
Kwanghee Cho ◽  
Sang Wan Cho ◽  
Pyung Eun Jeon ◽  
Hyunbok Lee ◽  
Chung-Nam Whang ◽  
...  

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