AbstractWe have extended the spectrum of molecular-beam epitaxy (MBE) related techniques by introducing in-situ deposition of oxides. The oxide films have been deposited on clean, atomically ordered (100) GaAs wafer surfaces using molecular beams of gallium-, magnesium-, silicon-, or aluminum oxide. Among the fabricated oxide-GaAs heterostructures, Ga2O3-GaAs interfaces exhibit unique electronic properties including an interface state density Dit in the low 1010 cm−2eV−1 range and an interface recombination velocity S of 4000 cm/s. The formation of inversion layers in both n- and p-type GaAs has been clearly established. Further, thermodynamic and photochemical stability of excellent electronic interface properties of Ga2O3-GaAs structures has been demonstrated.
Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy
