Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Passlack ◽  
M. Hong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beams ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
In Situ Deposition ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractWe have extended the spectrum of molecular-beam epitaxy (MBE) related techniques by introducing in-situ deposition of oxides. The oxide films have been deposited on clean, atomically ordered (100) GaAs wafer surfaces using molecular beams of gallium-, magnesium-, silicon-, or aluminum oxide. Among the fabricated oxide-GaAs heterostructures, Ga2O3-GaAs interfaces exhibit unique electronic properties including an interface state density Dit in the low 1010 cm−2eV−1 range and an interface recombination velocity S of 4000 cm/s. The formation of inversion layers in both n- and p-type GaAs has been clearly established. Further, thermodynamic and photochemical stability of excellent electronic interface properties of Ga2O3-GaAs structures has been demonstrated.

Effect of GaAs Surface Stoichiometry on The Interface of As-Grown Epitaxial ZnSe/Epitaxial GaAs Heterostructures

1989 ◽  
Vol 161 ◽  
Author(s):  
J. Qiu ◽  
R.L. Gunshor ◽  
M. Kobayashi ◽  
D.R. Menke ◽  
Q.-D. Qian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Gaas Surface ◽  
Dramatic Reduction ◽  
Epitaxial Gaas ◽  
Capacitance Voltage ◽  
State Densities

ABSTRACTIn the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe to form epitaxial ZnSe/epitaxial GaAs interfaces. The structures were grown by molecular beam epitaxy and evaluated by several techniques including capacitance-voltage (C-V) measurements. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.

Properties of Thin SiO2 Films with In-Situ Deposition of Poly Si Electrodes

1989 ◽  
Vol 146 ◽  
Author(s):  
Paihung Pan ◽  
Ahmad Kermani ◽  
Wayne Berry ◽  
Jimmy Liao
Keyword(s):  
Electrical Properties ◽  
Breakdown Strength ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
In Situ Deposition ◽  
Different Temperatures ◽  
Flatband Voltage ◽  
Si Films

ABSTRACTElectrical properties of thin (12 nm) SiO2 films with and without in-situ deposited poly Si electrodes have been studied. Thin SiO2 films were grown by the rapid thermal oxidation (RTO) process and the poly Si films were deposited by the rapid thermal chemical vapor deposition (RTCVD) technique at 675°C and 800°C. Good electrical properties were observed for SiO2 films with thin in-situ poly Si deposition; the flatband voltage was ∼ -0.86 V, the interface state density was < 2 × 1010/cm2/eV, and breakdown strength was > 10 MV/cm. The properties of RTCVD poly Si were also studied. The grain size was 10-60 rim before anneal and was 50-120 rim after anneal. Voids were found in thin (< 70 nm) RTCVD poly Si films. No difference in either SiO2 properties or poly Si properties was observed for poly Si films deposited at different temperatures.

scholarly journals Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites

2019 ◽  
Vol 3 (3) ◽  
pp. 814-822 ◽  
Author(s):  
Chaoran Jiang ◽  
Jiang Wu ◽  
Savio J. A. Moniz ◽  
Daqian Guo ◽  
Mingchu Tang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Water Splitting ◽  
Molecular Beam ◽  
Photoelectrochemical Water Splitting ◽  
Hole Trapping ◽  
In Situ Deposition ◽  
Trapping Sites

A nanocomposite Ni–B/Ga(As)Ox/GaAs photoanode fabricated by combining molecular beam epitaxy with in situ photoassisted electrodeposition enables efficient and stable photoelectrochemical water splitting.

In-Situ Etch to Improve Chemical Beam Epitaxy Regrown AlgaAs/GaAs Interfaces for HBT Applications

1996 ◽  
Vol 448 ◽  
Author(s):  
Y.M. Hsin ◽  
N. Y. Li ◽  
C. W. Tu ◽  
P. M. Asbeck
Keyword(s):  
Etching Rate ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Chemical Beam Epitaxy ◽  
Capacitance Voltage ◽  
Substrate Temperatures ◽  
Etching Effect

AbstractWe have studied the etching effect of AlxGa1-xAs (0≤ x ≤ 0.5) by trisdimethylaminoarsenic (TDMAAs) at different substrate temperatures, and the quality of the resulting etched/regrown GaAs interface. We find that the etching rate of AlxGa1-x As decreases with increasing Al composition, and the interface trap density of the TDMAAs etched/regrown interface can be reduced by about a factor of 10 as deduced from capacitance-voltage carrier profiles. A smooth surface morphology of GaAs with an interface state density of 1.4×l011 cm−2 can be obtained at a lower in-situ etching temperature of 550°C. Moreover, by using this in-situ etching the I-V characteristics of regrown p-n junctions of Al0.35Ga0.65As/Al0.25Ga0.75As and Al0.35Ga0.65As/GaAs can be improved.

Improving the Structural and Electrical Properties of Epitaxial CaF2 on Si By Rapid Thermal Anneaing

1985 ◽  
Vol 53 ◽  
Author(s):  
Julia M. Phillips ◽  
Mary L. Manger ◽  
Loren Pfeiffer ◽  
D. C. Joy ◽  
T. P. Smith ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Crack Formation ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Bulk Single Crystal ◽  
Electrical Characteristics ◽  
Structural And Electrical Properties ◽  
Annealing Procedure

ABSTRACTRapid thermal annealing (RTA) has been shown to be a useful technique for improving the epitaxial quality of CaF2 films grown on Si(100) by molecular beam epitaxy. We have modified the annealing procedure to prevent crack formation, while still maintaining high film quality. Our work also shows RTA to be useful for improving the crystalline quality, chemical stability, and electrical characteristics of CaF2 films grown on Si(111). After RTA, the crystallinity of CaF2 films on Si(111), as measured by electron channeling, is indistinguishable from bulk single crystal CaF2, and the interface state density is reduced by nearly two orders of magnitude from that found in as-grown films.

Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy

1996 ◽  
Vol 68 (25) ◽  
pp. 3605-3607 ◽  
Author(s):  
M. Passlack ◽  
M. Hong ◽  
J. P. Mannaerts ◽  
J. R. Kwo ◽  
L. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Recombination Velocity
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