Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes

The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide compensated with chromium) were studied by the optical pump–terahertz probe technique. Charge carrier lifetimes and contributions from various recombination mechanisms were determined at different injection levels using the model, which takes into account the influence of surface and volume Shockley–Read–Hall (SRH) recombination, interband radiative transitions and interband and trap-assisted Auger recombination. It was found that, in most cases for HR GaAs:Cr and SI GaAs:EL2, Auger recombination mechanisms make the largest contribution to the recombination rate of nonequilibrium charge carriers at injection levels above ~(0.5–3)·1018 cm−3, typical of pump–probe experiments. At a lower photogenerated charge carrier concentration, the SRH recombination prevails. The derived charge carrier lifetimes, due to the SRH recombination, are approximately 1.5 and 25 ns in HR GaAs:Cr and SI GaAs:EL2, respectively. These values are closer to but still lower than the values determined by photoluminescence decay or charge collection efficiency measurements at low injection levels. The obtained results indicate the importance of a proper experimental data analysis when applying terahertz time-resolved spectroscopy to the determination of charge carrier lifetimes in semiconductor crystals intended for the fabrication of devices working at lower injection levels than those at measurements by the optical pump–terahertz probe technique. It was found that the charge carrier lifetime in HR GaAs:Cr is lower than that in SI GaAs:EL2 at injection levels > 1016 cm−3.

Application of Pump-Probe Technique for Tracking of Charge Carrier Relaxation In Nanostructured Semiconductors

The pump-probe technique is a powerful tool for probing and characterizing the electronic and structural properties of short-lived excited states of materials. Upon the absorption of photons of the pump, excited states of the materials are established. Relaxation of these states reflects many physical aspects of the materials which can be tracked by a consequent beam – the probe. In this study, we present a conventional pump-probe technique at the University of Amsterdam and its application for tracking relaxation of charge carriers in thin films containing Si and Ge nanocrystals embedded in SiO2 matrix. The pump beam is obtained from a 150-fs laser pulse with the photon wavelength at 340 nm. The probe beam is constituted from a white-light beam in the wavelength range from approximately 900 - 1300 nm (0.9 - 1.4 eV). The photon-generated charge carriers feature with multi-exponent decay dynamics, involving to different physical characteristics. The fast decay components of about few ps time scale arise from defect-related trapping or Auger processes, while the slow decay components of about few hundred ps come from relaxation of the exciton left in the semiconductor nanocrystals. The deep-insight characterization of the materials involving to individual relaxation processes are presented and discussed.

A New Technique to Measure the Level of Interest Using Heartbeat-Evoked Brain Potential

Interest is a positive emotion related to attention. The event-related brain potential (ERP) probe technique is a useful method to evaluate the level of interest in dynamic stimuli. However, even in the irrelevant probe technique, the probe is presented as a physical stimulus and steals the observer’s attentional resources, although no overt response is required. Therefore, the probe might become a problematic distractor, preventing deep immersion of participants. Heartbeat-evoked brain potential (HEP) is a brain activity, time-locked to a cardiac event. No probe is required to obtain HEP data. Thus, we aimed to investigate whether the HEP can be used to evaluate the level of interest. Twenty-four participants (12 males and 12 females) watched attractive and unattractive individuals of the opposite sex in interesting and uninteresting videos (7 min each), respectively. We performed two techniques each for both the interesting and the uninteresting videos: the ERP probe and the HEP techniques. In the former, somatosensory stimuli were presented as task-irrelevant probes while participants watched videos: frequent (80%) and infrequent (20%) stimuli were presented at each wrist in random order. In the latter, participants watched videos without the probe. The P2 amplitude in response to the somatosensory probe was smaller and the positive wave amplitudes of HEP were larger while watching the videos of attractive individuals than while watching the videos of unattractive ones. These results indicate that the HEP technique is a useful method to evaluate the level of interest without an external probe stimulus.