Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
Keyword(s):
2006 ◽
Vol 24
(6)
◽
pp. 2636
◽
1991 ◽
Vol 38
(8)
◽
pp. 1593-1598
◽
Keyword(s):
1998 ◽
Vol 145
(1)
◽
pp. 299-302
◽