scholarly journals The motion of a neutrally buoyant particle of an elliptic shape in two dimensional shear flow: A numerical study

2015 ◽  
Vol 27 (8) ◽  
pp. 083303 ◽  
Author(s):  
Shih-Lin Huang ◽  
Shih-Di Chen ◽  
Tsorng-Whay Pan ◽  
Chien-Cheng Chang ◽  
Chin-Chou Chu
2013 ◽  
Vol 87 ◽  
pp. 57-66 ◽  
Author(s):  
Tsorng-Whay Pan ◽  
Shih-Lin Huang ◽  
Shih-Di Chen ◽  
Chin-Chou Chu ◽  
Chien-Cheng Chang

2011 ◽  
Vol 10 (2) ◽  
pp. 453-473 ◽  
Author(s):  
Jian-Jun Xu ◽  
Zhilin Li ◽  
John Lowengrub ◽  
Hongkai Zhao

AbstractIn this paper, we numerically investigate the effects of surfactant on drop-drop interactions in a 2D shear flow using a coupled level-set and immersed interface approach proposed in (Xu et al., J. Comput. Phys., 212 (2006), 590-616). We find that surfactant plays a critical and nontrivial role in drop-drop interactions. In particular, we find that the minimum distance between the drops is a non-monotone function of the surfactant coverage and Capillary number. This non-monotonic behavior, which does not occur for clean drops, is found to be due to the presence of Marangoni forces along the drop interfaces. This suggests that there are non-monotonic conditions for coalescence of surfactant-laden drops, as observed in recent experiments of Leal and co-workers. Although our study is two-dimensional, we believe that drop-drop interactions in three-dimensional flows should be qualitatively similar as the Maragoni forces in the near contact region in 3D should have a similar effect.


2014 ◽  
Vol 119 ◽  
pp. 236-244 ◽  
Author(s):  
Zheng Yuan Luo ◽  
Long He ◽  
Shu Qi Wang ◽  
Savas Tasoglu ◽  
Feng Xu ◽  
...  

PIERS Online ◽  
2007 ◽  
Vol 3 (3) ◽  
pp. 305-307 ◽  
Author(s):  
Jie Xu ◽  
Ping Chen ◽  
Yue Shi ◽  
Xin-Yi Ji ◽  
Ai-Min Jiang ◽  
...  

2017 ◽  
Author(s):  
Varun Bheemireddy

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>


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