High-speed, high-voltage pulse generation using avalanche transistor

2016 ◽  
Vol 87 (5) ◽  
pp. 054708 ◽  
Author(s):  
Gou Yong-sheng ◽  
Liu Bai-yu ◽  
Bai Yong-lin ◽  
Qin Jun-jun ◽  
Bai Xiao-hong ◽  
...  
2018 ◽  
Vol 18 (1) ◽  
pp. 20-28 ◽  
Author(s):  
Ki Wook Lee ◽  
Jung Ho Kim ◽  
Sungsup Oh ◽  
Wangyong Lee ◽  
Woo-Joong Kim ◽  
...  

2000 ◽  
Vol 28 (5) ◽  
pp. 1356-1361 ◽  
Author(s):  
B.M. Novac ◽  
I.R. Smith ◽  
S.E. Goh ◽  
M.C. Enache ◽  
K. Gregory ◽  
...  

2000 ◽  
Vol 28 (5) ◽  
pp. 1362-1367 ◽  
Author(s):  
G.-H. Rim ◽  
H.-S. Lee ◽  
E.P. Pavlov ◽  
G.-H. Kim ◽  
C.-H. Cho ◽  
...  

2013 ◽  
Vol 62 (3) ◽  
pp. 463-472
Author(s):  
Michał Balcerak ◽  
Marcin Hołub ◽  
Ryszard Pałka

Abstract The paper presents an overview of a method of nanosecond-scale high voltage pulse generation using magnetic compression circuits. High voltage (up to 18 kV) short pulses (up to 1.4 μs) were used for Pulsed Corona Discharge generation. In addition, the control signal of parallel connection of IGBT and MOSFET power transistor influence on system losses is discussed. For a given system topology, an influence of core losses on overall pulse generator efficiency is analysed.


Author(s):  
A. B. J. M. Driessen ◽  
E. J. M. van Heesch ◽  
T. Huiskamp ◽  
F. J. C. M. Beckers ◽  
A. J. M. Pemen

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