scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
2016 ◽  
Vol 119 (16) ◽  
pp. 165303 ◽  
Author(s):  
Celso I. Fornari ◽  
Paulo H. O. Rappl ◽  
Sérgio L. Morelhão ◽  
Eduardo Abramof

2006 ◽  
Vol 89 (26) ◽  
pp. 262903 ◽  
Author(s):  
O. Maksimov ◽  
V. D. Heydemann ◽  
P. Fisher ◽  
M. Skowronski ◽  
P. A. Salvador

AIP Advances ◽  
2017 ◽  
Vol 7 (4) ◽  
pp. 045211 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Z. Y. S. Zhu ◽  
Y. Han ◽  
Q. M. Chen ◽  
...  

2003 ◽  
Vol 83 (18) ◽  
pp. 3740-3742 ◽  
Author(s):  
Hiroki Yamazaki ◽  
Yasuyuki Hikita ◽  
Hiroki Hori ◽  
Hidenori Takagi

2006 ◽  
Vol 100 (12) ◽  
pp. 124109 ◽  
Author(s):  
G. Delhaye ◽  
C. Merckling ◽  
M. El-Kazzi ◽  
G. Saint-Girons ◽  
M. Gendry ◽  
...  

Cryogenics ◽  
1994 ◽  
Vol 34 ◽  
pp. 859-862 ◽  
Author(s):  
M. Salvato ◽  
C. Attanasio ◽  
C. Coccorese ◽  
L. Maritato ◽  
S.L. Prischepa

1997 ◽  
Vol 485 ◽  
Author(s):  
B. H. Tseng ◽  
S. B. Lin ◽  
D. J. Yang

AbstractCuInSe2 epitaxial films having superior luminescence properties were prepared by using (001) GaAs substrates and then by thermal annealing in the presence of a Se-beam flux. We also found that exciton emission became dominant when the film composition was very close to the stoichiometry.


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