Rapid thermal annealing effects in CdTe (111) thin films grown on Si (100) substrates by molecular beam epitaxy

1997 ◽  
Vol 293 (1-2) ◽  
pp. 196-199 ◽  
Author(s):  
M.S. Han ◽  
Y.S. Ryu ◽  
B.K. Song ◽  
T.W. Kang ◽  
T.W. Kim
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Annealing Effects

Rapid Thermal Annealing on GaSb Thin Films Grown by Molecular Beam Epitaxy on GaAs Substrates

2013 ◽  
Vol 787 ◽  
pp. 143-147 ◽  
Author(s):  
Rui Ting Hao ◽  
Jie Guo ◽  
Shu Kang Deng ◽  
Ying Liu ◽  
Yan Mei Miao ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Gaas Substrates ◽  
Different Temperatures

Unintentionally doped GaSb films grown by Molecular Beam Epitaxy (MBE) on GaAs (001) substrates were annealed under different temperatures and time. It was found that the rapid thermal annealing (RTA) process can improve the optical properties. By changing annealing temperature and time, the optimized annealing temperature and times are found to be 650°C and 30s, respectively. Point defects and dislocations are two major kinds of defect in undoped GaSb thin films grown by MBE on GaAs (001) substrates.

Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effects

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

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