scholarly journals Analysis of asymmetric property with DC bias current on thin-film magnetoimpedance element

AIP Advances ◽  
2017 ◽  
Vol 8 (5) ◽  
pp. 056618 ◽  
Author(s):  
Hiroaki Kikuchi ◽  
Chihiro Sumida
Keyword(s):  
2017 ◽  
Vol 53 (11) ◽  
pp. 1-4 ◽  
Author(s):  
H. Kikuchi ◽  
C. Sumida ◽  
T. Nakai ◽  
S. Hashi ◽  
K. Ishiyama
Keyword(s):  

1993 ◽  
Vol 07 (09) ◽  
pp. 633-639
Author(s):  
YUHUA HUO ◽  
SHOUZHEN ZHAO ◽  
FANGWU SHAO ◽  
CHANGCHUN WEI ◽  
LINGWEN ZENG ◽  
...  

TlBaCaCuO thick films were fabricated by the method of screen printing. Zero resistance temperature of 110 K–118 K and critical current density of about 102 A/cm 2 at 77 K were obtained. The thickness of the film was about 30 μm. Using the thick film we have fabricated three-dimensional DC SQUID. The flux modulated V–I curve, V–H curve, and triangular patterns in response to flux applied at the different dc bias current were measured. The results showed that not only TlBaCaCuO thick film DC SQUID was like that from TlBaCaCuO thin film in good microwave behaviour but also the processes of fabricating thick film DC SQUID were easy.


1992 ◽  
Vol 06 (04) ◽  
pp. 221-225
Author(s):  
S.L. YAN ◽  
H.H. FENG ◽  
L. FANG ◽  
H.L. CAO ◽  
X.M. YANG

Microwave detecting properties of Tl -based high T c superconducting microbridges have been investigated at liquid nitrogen temperature. The microbridges with the area of about 4×4 μ m 2 were fabricated by photolithographing and chemical etching superconducting Tl 2 Ba 2 Ca 2 Cu 3 O x thin films. Zero resistance temperatures T c (R=0) of the thin films were over 110 K. Detecting sensitivity was influenced heavily by the dc bias current and was reasonably linear function of the incident microwave power at a constant bias current. The sensitivity of 5.5×104 V/W has been obtained at microwave frequency of 9.40 GHz.


2004 ◽  
Vol 28 (3) ◽  
pp. 275-278
Author(s):  
K. Taguchi ◽  
S. Takahashi ◽  
K. Yamakawa ◽  
K. Ouchi

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4264
Author(s):  
Michal Gierczynski ◽  
Lech M. Grzesiak ◽  
Arkadiusz Kaszewski

This paper deals with a well-known problem of the transient DC-bias current occurring during a phase shift transition in dual active bridge (DAB) DC/DC converters. This phenomenon, if not compensated, can cause damage to the converter or deteriorate its performance. One aim of this paper is to present a solution which allows for the elimination of the undesired transient DC-bias component in current waveforms. This solution is the dual rising edge shift (DRES) compensation algorithm. It provides a very simple implementation and fast settling time within the first half of a switching period. Moreover, the solution is independent on any measurements or system parameter values. It is based on the double-sided single phase shift (DSSPS) modulation, which is described in detail along with a converter model in steady-state. Then, the mechanisms leading to the transient DC-bias are explained, and the compensation algorithm is derived. The performance of the algorithm has been tested using a laboratory prototype. A comprehensive set of tests, involving rapid step changes in power flow and frequency sweep, are provided. Finally, the features of the proposed algorithm are briefly discussed.


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