Branch-point structure and the energy level characterization of avoided crossings

The Zr -doped TiN coating, a nanometer (Ti, Zr)N thin film, has been deposited by reactive magnetron sputtering on slides and Al substrates. The crystalline phase and energy band structure have been analyzed by XRD and STS. The results of XRD show that the (Ti, Zr)N film is poly crystalline and consisted of mixed crystal of TiN and ZrN phase. The STS spectra show that Zr -doping didn't change the position and band-gap of energy level, only two new energy levels appeared, Eg = 0.33eV and Eg = 0.42eV. According to the results of measurement, (Ti, Zr)N has higher hardness and better corrosion resistance than TiN by Zr -doping.

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Direct characterization of the energy level alignments and molecular components in an organic hetero-junction by integrated photoemission spectroscopy and reflection electron energy loss spectroscopy analysis

Nanotechnology ◽

10.1088/0957-4484/27/34/345704 ◽

2016 ◽

Vol 27 (34) ◽

pp. 345704 ◽

Cited By ~ 3

Author(s):

Dong-Jin Yun ◽

Weon-Ho Shin ◽

Xavier Bulliard ◽

Jong Hwan Park ◽

Seyun Kim ◽

...

Keyword(s):

Energy Level ◽

Energy Loss ◽

Electron Energy ◽

Electron Energy Loss Spectroscopy ◽

Photoemission Spectroscopy ◽

Spectroscopy Analysis ◽

Molecular Components ◽

Electron Energy Loss

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Molecular Characterization of High Plant Species Using PCR with Primers Designed from Consensus Branch Point Signal Sequences

Biochemical Genetics ◽

10.1007/s10528-010-9412-6 ◽

2011 ◽

Vol 49 (5-6) ◽

pp. 352-363 ◽

Cited By ~ 2

Author(s):

Faqian Xiong ◽

Jing Jiang ◽

Zhuqiang Han ◽

Ruichun Zhong ◽

Liangqiong He ◽

...

Keyword(s):

Molecular Characterization ◽

Plant Species ◽

Branch Point ◽

Signal Sequences

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PREPARATIONS OF ZINC OXIDES AND CHARACTERIZATION OF THE PHOTOVOLTAIC BEHAVIOR USING A SCANNING KELVIN PROBE

Surface Review and Letters ◽

10.1142/s0218625x10014272 ◽

2010 ◽

Vol 17 (05n06) ◽

pp. 451-455

Author(s):

Y. HE ◽

W. ZHI ◽

B. O. ZHOU

Keyword(s):

Energy Level ◽

Level Structure ◽

Surface Photovoltage ◽

Zno Films ◽

Semiconductor Films ◽

Kelvin Probe ◽

Energy Level Structure ◽

Scanning Kelvin Probe ◽

Photovoltaic Behavior

Surface photovoltage of semiconductors depend strongly on their electronic structures, in particular, their Fermi energy level. This offers a possibility to characterize photoelectronic behavior using the Kelvin probe structure by measurements of work function (WF). In this paper, ZnO films were prepared using the CVD method and their microstructures and morphology were characterized using the XRD and SEM. Furthermore, photovoltage evolution and WF of selected ZnO samples were measured using a scanning Kelvin probe (SKP) system. It is found that the surface photovoltage and its time-resolved evolution process as well as the energy level structure of ZnO films can be correlated to WF very well. The present study therefore provides a simple and practical methodology for the characterization of photovoltaic behavior of semiconductor films.

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