Photoluminescence technique for the determination of minority‐carrier diffusion length in GaAs grown by molecular beam epitaxy
2015 ◽
Vol 12
(4-5)
◽
pp. 447-450
◽
Keyword(s):
1997 ◽
Vol 101
(20)
◽
pp. 3961-3967
◽
Keyword(s):
Keyword(s):