High field electron transport inn‐InP/GaInAs two‐dimensional electron gas

1985 ◽  
Vol 46 (9) ◽  
pp. 875-877 ◽  
Author(s):  
Kotaro Tsubaki ◽  
Takashi Fukui ◽  
Hisao Saito
2011 ◽  
Vol 25 (18) ◽  
pp. 1529-1536 ◽  
Author(s):  
JIAN-DUO LU ◽  
HONG-YU LIU ◽  
YUN-BAO LI ◽  
MEI-JUAN YUN ◽  
WEI ZHENG

The spin-dependent electron transport is theoretically investigated in a two-dimensional electron gas, which is periodically modulated by ferromagnetic and Schottky metal (SM) stripes. We find that the spin-dependent transmission and conductance as well as polarization strongly depend on the number of periods. We also find that the transmission and the polarization of transmitted beams periodically change with increasing the width of the SM stripe.


2012 ◽  
Vol 26 (26) ◽  
pp. 1250138
Author(s):  
JIAN-DUO LU ◽  
BIN XU ◽  
WEI ZHENG

We theoretically present the spin-dependent electron transport in a two-dimensional electron gas (2DEG) with finite width modulated by magnetic–electric barriers. It is found that the transmission probability and the spin polarization are strongly dependent on the height of the electric barrier, the energy of the incident electron, the distance between the two magnetic fields, and the width of the 2DEG. These may be useful for making the practical devices.


2006 ◽  
Vol 13 (05) ◽  
pp. 599-605
Author(s):  
MAOWANG LU

The spin-dependent electron transport in a two-dimensional electron gas (2DEG) modulated by a stripe of magnetized ferromagnetic metal under an applied voltage was investigated theoretically. It is revealed that highly spin-polarized current can be achieved in this kind of nanosystems. It is also shown that the spin polarity of the electron transport can be switched by adjusting the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to spin polarize electrons into semiconductors, and this device may be used as a voltage-tunable spin filter.


2016 ◽  
Vol 109 (12) ◽  
pp. 122106 ◽  
Author(s):  
Ming Yang ◽  
Kun Han ◽  
Olivier Torresin ◽  
Mathieu Pierre ◽  
Shengwei Zeng ◽  
...  

2020 ◽  
Vol 89 (2) ◽  
pp. 20101
Author(s):  
Muhammad Javaid Iqbal ◽  
Dirk Reuter ◽  
Andreas Dirk Wieck ◽  
Caspar van der Wal

The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures, with a 2DEG at typically 100 nm below the surface, are widely studied. In order to explore electron transport in such systems, low-resistance ohmic contacts are required that connect the 2DEG to macroscopic measurement leads at the surface. Here we report on designing and measuring a dedicated device for unraveling the various resistance contributions in such contacts, which include pristine 2DEG series resistance, the 2DEG resistance under a contact, the contact resistance itself, and the influence of pressing a bonding wire onto a contact. We also report here a recipe for contacts with very low resistance values that remain below 10 Ω for annealing times between 20 and 350 s, hence providing the flexibility to use this method for materials with different 2DEG depths. The type of heating, temperature ramp rate and gas forming used for annealing is found to strongly influence the annealing process and hence the quality of the resulting contacts.


2001 ◽  
Vol 89 (7) ◽  
pp. 3793-3797 ◽  
Author(s):  
A. P. Dmitriev ◽  
V. Yu. Kachorovskii ◽  
M. S. Shur

1992 ◽  
Vol 46 (7) ◽  
pp. 4324-4327 ◽  
Author(s):  
A. K. Geim ◽  
R. Taboryski ◽  
A. Kristensen ◽  
S. V. Dubonos ◽  
P. E. Lindelof

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