The critical layer thickness (CLT) determines the criteria for dislocation formation and the onset of lattice relaxation. Although several theoretical models have been developed for the critical layer thickness, experimentally-measured CLTs in ZnSe/GaAs (001) heterostructures are often at variance with one another as well as with established theories. In a previous work [T. Kujofsa et al., J. Vac. Sci. Technol. B, 34, 051201 (2016)], we showed that the experimentally measured CLT may be much larger than the equilibrium value when using finite experimental resolution. In this work, we apply a general dislocation flow model to determine the apparent critical layer thickness as a function of the experimental resolution for ZnSe/GaAs (001) heterostructures. More importantly, we compare the results utilizing different equilibrium theories and therefore varying driving forces for the lattice relaxation in order to determine which established models are consistent with several measured values of CLT for ZnSe/GaAs (001) once kinetically-limited relaxation and finite experimental strain resolution are taken into account.
Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)]