Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction

1993 ◽  
Vol 22 (11) ◽  
pp. 1365-1368 ◽  
Author(s):  
C. A. Wang ◽  
S. H. Groves ◽  
J. H. Reinold ◽  
D. R. Calawa
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Multiple Quantum Wells ◽  
Critical Layer ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Critical Layer Thickness ◽  
Double Crystal ◽  
X Ray ◽  
Strained Layer

Photoluminescence, intersubband absorption, and double crystal x‐ray diffraction inp‐doped InGaAs/AlGaAs strained multiple quantum wells

1994 ◽  
Vol 65 (11) ◽  
pp. 1430-1432 ◽  
Author(s):  
V. W. L. Chin ◽  
T. L. Tansley ◽  
D. H. Zhang ◽  
K. Radhakrishnan ◽  
S. F. Yoon ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Intersubband Absorption

Phase Separation in InGaN/GaN Multiple Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
M. D. Mccluskey ◽  
L. T. Romano ◽  
B. S. Krusor ◽  
D. P. Bour ◽  
C. Chua ◽  
...  
Keyword(s):  
Phase Separation ◽  
Active Region ◽  
Quantum Wells ◽  
Broad Peak ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Peaks

AbstractEvidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of Inrich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.

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