Signal characterization of frother dosage effect in two- phase column flotation process using capacitive measurement method

Porosity variations induced by swelling agent exchange were studied in a styrene-divinylbenzene copolymer. Standard methods were used in the characterization of copolymer porosity in the dry state and the results were compared with related structural parameters derived from small angle X-ray scattering (SAXS) measurements as developed for the characterization of two-phase systems. The SAXS method was also used for porosity determination in swollen samples. The differences in the porosity of dry samples were found to be an effect of the drying process, while in the swollen state the sample swells and deswells isotropically.

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Characterization of R134a two-phase flow regimes in horizontal and vertical smooth tubes with capacitive sensors

International Journal of Refrigeration ◽

10.1016/j.ijrefrig.2021.01.015 ◽

2021 ◽

Vol 125 ◽

pp. 90-103

Author(s):

Hongliang Qian ◽

Pega Hrnjak

Keyword(s):

Two Phase Flow ◽

Flow Regimes ◽

Phase Flow ◽

Capacitive Sensors ◽

Two Phase ◽

Smooth Tubes

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RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078721000076 ◽

2021 ◽

pp. 1-6

Author(s):

Frédéric Drillet ◽

Jérôme Loraine ◽

Hassan Saleh ◽

Imene Lahbib ◽

Brice Grandchamp ◽

...

Keyword(s):

Power Level ◽

Coplanar Waveguide ◽

Average Power ◽

Input Power ◽

Capacitive Coupling ◽

Rf Switch ◽

Large Signal ◽

Waveguide Transmission ◽

Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

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