Specular transmission in nodal-line Weyl semimetal resonant tunneling junction

2020 ◽  
Vol 117 (20) ◽  
pp. 203505
Author(s):  
Yu-Xian Li
2020 ◽  
Vol 32 (18) ◽  
pp. 185001
Author(s):  
Chunxu Bai ◽  
Yanling Yang

1992 ◽  
Vol 45 (24) ◽  
pp. 14036-14041 ◽  
Author(s):  
I. V. Lerner ◽  
M. E. Raikh

1996 ◽  
Vol 53 (12) ◽  
pp. 7842-7846 ◽  
Author(s):  
Xiaoshuang Chen ◽  
Jijun Zhao ◽  
Guanghou Wang

2017 ◽  
Vol 114 (40) ◽  
pp. 10596-10600 ◽  
Author(s):  
Simin Nie ◽  
Gang Xu ◽  
Fritz B. Prinz ◽  
Shou-cheng Zhang

Recognized as elementary particles in the standard model, Weyl fermions in condensed matter have received growing attention. However, most of the previously reported Weyl semimetals exhibit rather complicated electronic structures that, in turn, may have raised questions regarding the underlying physics. Here, we report promising topological phases that can be realized in specific honeycomb lattices, including ideal Weyl semimetal structures, 3D strong topological insulators, and nodal-line semimetal configurations. In particular, we highlight a semimetal featuring both Weyl nodes and nodal lines. Guided by this model, we showed that GdSI, the long-perceived ideal Weyl semimetal, has two pairs of Weyl nodes residing at the Fermi level and that LuSI (YSI) is a 3D strong topological insulator with the right-handed helical surface states. Our work provides a mechanism to study topological semimetals and proposes a platform for exploring the physics of Weyl semimetals as well as related device designs.


1977 ◽  
Vol 38 (11) ◽  
pp. 1443-1448 ◽  
Author(s):  
G. Sarrabayrouse ◽  
J. Buxo ◽  
D. Esteve

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-585-C5-588 ◽  
Author(s):  
R. E. NAHORY ◽  
N. TABATABAIE

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


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