Resonant tunneling through traps in Schottky barriers

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.871 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 871-878

Author(s):

Masanari FUJITA ◽

Mitsufumi SAITO ◽

Michihiko SUHARA

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diode ◽

Tunneling Diode ◽

Spin Polarized

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Single-band quantum transport study of resonant tunneling diodes based on silicene nanoribbons

2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO) ◽

10.23919/mipro48935.2020.9245394 ◽

2020 ◽

Author(s):

M. Mihaljevic ◽

M. Siric ◽

M. Poljak

Keyword(s):

Quantum Transport ◽

Resonant Tunneling ◽

Single Band ◽

Resonant Tunneling Diodes ◽

Tunneling Diodes ◽

Transport Study ◽

Silicene Nanoribbons

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Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2005p0064 ◽

2005 ◽

Author(s):

U. Kerst ◽

P. Sadewater ◽

R. Schlangen ◽

C. Boit ◽

R. Leihkauf ◽

...

Keyword(s):

Numerical Simulation ◽

Electrical Properties ◽

Process Parameters ◽

Thermal Effects ◽

Silicon Surface ◽

Ohmic Contacts ◽

Ion Beam ◽

Schottky Barriers ◽

Material Analysis ◽

Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

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