scholarly journals Charge-offset stability of single-electron devices based on single-layered Fe nanodot array

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035230
Author(s):  
Takayuki Gyakushi ◽  
Yuki Asai ◽  
Shusaku Honjo ◽  
Atsushi Tsurumaki-Fukuchi ◽  
Masashi Arita ◽  
...  
Keyword(s):  
Single Electron ◽  
Nanodot Array ◽  
Single Electron Devices ◽  
Electron Devices

Double-gate single-electron devices formed by single-layered Fe nanodot array

2020 ◽  
Author(s):  
Takayuki Gyakushi ◽  
Yuki Asai ◽  
Beommo Byun ◽  
Ikuma Amano ◽  
Atsushi Tsurumaki-Fukuchi ◽  
...  
Keyword(s):  
Single Electron ◽  
Double Gate ◽  
Nanodot Array ◽  
Single Electron Devices ◽  
Electron Devices

Single-electron devices with granulated film cotunneling suppressors

2006 ◽  
Author(s):  
Alexei Orlov ◽  
Xiangning Luo ◽  
Thomas Kosel ◽  
Gregory Snider
Keyword(s):  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

Silicon single-electron devices

1999 ◽  
Vol 86 (5) ◽  
pp. 605-639 ◽  
Author(s):  
YASUO TAKAHASHI ◽  
AKIRA FUJIWARA ◽  
MASAO NAGASE ◽  
HIDEO NAMATSU ◽  
KENJI KURIHARA ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

Single-electron devices via controlled assembly of designed nanoparticles

1999 ◽  
Vol 47 (1-4) ◽  
pp. 179-183 ◽  
Author(s):  
Tobias Junno ◽  
Martin H. Magnusson ◽  
Sven-Bertil Carlsson ◽  
Knut Deppert ◽  
Jan-Olle Malm ◽  
...  
Keyword(s):  
Single Electron ◽  
Controlled Assembly ◽  
Single Electron Devices ◽  
Electron Devices

scholarly journals Single-electron devices with a mechanical degree of freedom

2012 ◽  
Vol 400 (5) ◽  
pp. 052028
Author(s):  
Yu A Pashkin ◽  
J P Pekola ◽  
D A Knyazev ◽  
T F Li ◽  
S Kafanov ◽  
...  
Keyword(s):  
Degree Of Freedom ◽  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

SINGLE ELECTRON DEVICES

1998 ◽  
Vol 09 (01) ◽  
pp. 165-207 ◽  
Author(s):  
DORAN D. SMITH
Keyword(s):  
Tunnel Junctions ◽  
Electron Flow ◽  
Superconducting Devices ◽  
Time Correlation ◽  
Single Electron ◽  
Net Charge ◽  
Flow Through ◽  
Single Electron Devices ◽  
Electron Devices ◽  
Electron Effects

In the mid 1980s Averin and Likharev predicted that with the use of ultrasmall tunnel junctions a time correlation of electron flow through a junction could be observed, and permit the measurement of the effect of a net charge of less than one electron on the junction. Both effects were soon experimentally verified, and since that time there has been an explosion of work in the filed of single electron devices. This chapter reviews the fundamental concepts behind the operation of such devices. it then describes some of the single electron effects studied in semiconductors. Superconducting devices are then constrasted to the semiconductor and the normal metal single electron devices. The details of some current applications are described, and a thumbnail sketch of current fabrication methods is given.

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