Atomic Transport Properties of Liquid Iron at conditions of Planetary Cores

Atomic transport properties like self diffusion coefficient (D), viscosity coefficient (η) of 3d liquid transition metals are studied. Here we have applied our own model potential to describe electron ion interaction with different reference system like Percus - Yevick Hard Sphere (PYHS), One Component Plasma (OCP) and Charge Hard Sphere (CHS) systems. We have investigated the effect of different correction function like Hartree (H), Vashishta-Singwi (VS), Hubbard-Sham (HS), Sarkar et al (S), Ichimaru-Utsumi(IU), Taylor (T) and Farid et al (F) on atomic transport properties. The proper choice of the model potential alongwith the local field correction function and reference system plays a vital role in the study of the atomic transport properties of 3d liquid transition metals.

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Higher-Order Correlation Effects on Electronic, Thermodynamic and Atomic-Transport Properties of Liquid Mercury Alloys*

Zeitschrift für Physikalische Chemie ◽

10.1524/zpch.1988.156.part_2.557 ◽

1988 ◽

Vol 156 (Part_2) ◽

pp. 557-561 ◽

Cited By ~ 2

Author(s):

Mitsuo Shimoji ◽

Toshio Itami ◽

Yukiko Morikawa

Keyword(s):

Transport Properties ◽

Higher Order ◽

Correlation Effects ◽

Liquid Mercury ◽

Atomic Transport

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Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation

MRS Proceedings ◽

10.1557/proc-568-43 ◽

1999 ◽

Vol 568 ◽

Cited By ~ 1

Author(s):

E. Napolitani ◽

A. Carnera ◽

V. Privitera ◽

A. La Magna ◽

E. Schroer ◽

...

Keyword(s):

Transport Properties ◽

Point Defects ◽

Crystalline Silicon ◽

Low Energy ◽

Electrical Activation ◽

Epitaxial Silicon ◽

High Concentration ◽

Enhanced Diffusion ◽

Atomic Transport ◽

Wide Range

ABSTRACTWe investigated the atomic transport properties and electrical activation of boron in crystalline epitaxial silicon after ultra-low energy ion implantation (0.25–1 keV) and rapid thermal annealing (750–1100 °C). A wide range of implant doses was investigated (3×1012-1×105/cm2). A fast Transient Enhanced Diffusion (TED) pulse is observed involving the tail of the implanted Boron, the profile displacement being dependent on the implant dose. The excess of interstitials able to promote enhanced diffusion of implanted boron occurs, provided the implant dose is high enough to generate a significant total number of point defects. The Boron diffusion following the fast initial TED pulse can be described by the equilibrium diffusion equations.The electrical activation of ultra-shallow implants is hard to achieve, due to the high concentration of dopant and point defects confined in a very shallow layer that significantly contributes to the formation of clusters and complex defects. Provided a correct combination of annealing temperatures and times for these ultra-shallow implants is chosen, however, a sheet resistance 500 Δ/square with a junction depth below 0.1μm can be obtained, which has a noteworthy technological relevance for the future generations of semiconductor devices.

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Atomic transport properties of liquid gallium and indium

Physics and Chemistry of Liquids ◽

10.1080/00319104.2016.1250271 ◽

2016 ◽

Vol 55 (5) ◽

pp. 570-578 ◽

Cited By ~ 2

Author(s):

A. V. Prajapati ◽

Yogesh Sonvane ◽

P. B. Thakor

Keyword(s):

Transport Properties ◽

Liquid Gallium ◽

Atomic Transport

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