Size-driven transition of domain switching kinetics in LiNbO3 domain-wall memory

2022 ◽  
Vol 131 (2) ◽  
pp. 024101
Author(s):  
Wen Di Zhang ◽  
Jun Jiang ◽  
An Quan Jiang
Keyword(s):  
Domain Wall ◽  
Domain Switching ◽  
Domain Wall Memory

Energy-Efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics

2020 ◽  
Vol 12 (40) ◽  
pp. 44998-45004
Author(s):  
Chao Wang ◽  
Jun Jiang ◽  
Xiaojie Chai ◽  
Jianwei Lian ◽  
Xiaobing Hu ◽  
...  
Keyword(s):  
Domain Wall ◽  
Energy Efficient ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
Switching Dynamics ◽  
Domain Wall Memory

scholarly journals Domain Wall Memory-Based Design of Deep Neural Network Convolutional Layers

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 19783-19798
Author(s):  
Jinil Chung ◽  
Woong Choi ◽  
Jongsun Park ◽  
Swaroop Ghosh
Keyword(s):  
Neural Network ◽  
Domain Wall ◽  
Deep Neural Network ◽  
Domain Wall Memory

scholarly journals Structure and Dynamics of Ferroelectric Domains in Polycrystalline Pb(Fe1/2Nb1/2)O3

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1327 ◽  
Author(s):  
Ursic ◽  
Bencan ◽  
Prah ◽  
Dragomir ◽  
Malic
Keyword(s):  
Domain Wall ◽  
Ambient Temperature ◽  
Domain Structure ◽  
Domain Walls ◽  
Domain Switching ◽  
Piezoresponse Force Microscopy ◽  
Paraelectric Phase Transition ◽  
Force Microscopy ◽  
Ferroelectric Domains

A complex domain structure with variations in the morphology is observed at ambient temperature in monoclinic Pb(Fe1/2Nb1/2)O3. Using electron microscopy and piezoresponse force microscopy, it is possible to reveal micrometre-sized wedge, lamellar-like, and irregularly shaped domains. By increasing the temperature, the domain structure persists up to 80 °C, and then starts to disappear at around 100 °C due to the proximity of the ferroelectric–paraelectric phase transition, in agreement with macroscopic dielectric measurements. In order to understand to what degree domain switching can occur in the ceramic, the mobility of the domain walls was studied at ambient temperature. The in situ poling experiment performed using piezoresponse force microscopy resulted in an almost perfectly poled area, providing evidence that all types of domains can be easily switched. By poling half an area with 20 V and the other half with −20 V, two domains separated by a straight domain wall were created, indicating that Pb(Fe1/2Nb1/2)O3 is a promising material for domain-wall engineering.

Multi-level domain wall memory in constricted magnetic nanowires

2013 ◽  
Vol 114 (4) ◽  
pp. 1347-1351 ◽  
Author(s):  
R. Sbiaa ◽  
S. N. Piramanayagam
Keyword(s):  
Domain Wall ◽  
Magnetic Nanowires ◽  
Multi Level ◽  
Domain Wall Memory

Cache Design with Domain Wall Memory

2016 ◽  
Vol 65 (4) ◽  
pp. 1010-1024 ◽  
Author(s):  
Rangharajan Venkatesan ◽  
Vivek J. Kozhikkottu ◽  
Mrigank Sharad ◽  
Charles Augustine ◽  
Arijit Raychowdhury ◽  
...  
Keyword(s):  
Domain Wall ◽  
Domain Wall Memory ◽  
Cache Design
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