scholarly journals Structure and Dynamics of Ferroelectric Domains in Polycrystalline Pb(Fe1/2Nb1/2)O3

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1327 ◽  
Author(s):  
Ursic ◽  
Bencan ◽  
Prah ◽  
Dragomir ◽  
Malic
Keyword(s):  
Domain Wall ◽  
Ambient Temperature ◽  
Domain Structure ◽  
Domain Walls ◽  
Domain Switching ◽  
Piezoresponse Force Microscopy ◽  
Paraelectric Phase Transition ◽  
Force Microscopy ◽  
Ferroelectric Domains

A complex domain structure with variations in the morphology is observed at ambient temperature in monoclinic Pb(Fe1/2Nb1/2)O3. Using electron microscopy and piezoresponse force microscopy, it is possible to reveal micrometre-sized wedge, lamellar-like, and irregularly shaped domains. By increasing the temperature, the domain structure persists up to 80 °C, and then starts to disappear at around 100 °C due to the proximity of the ferroelectric–paraelectric phase transition, in agreement with macroscopic dielectric measurements. In order to understand to what degree domain switching can occur in the ceramic, the mobility of the domain walls was studied at ambient temperature. The in situ poling experiment performed using piezoresponse force microscopy resulted in an almost perfectly poled area, providing evidence that all types of domains can be easily switched. By poling half an area with 20 V and the other half with −20 V, two domains separated by a straight domain wall were created, indicating that Pb(Fe1/2Nb1/2)O3 is a promising material for domain-wall engineering.

Ferroelectric domain-wall logic units

2021 ◽  
Author(s):  
Jing Wang ◽  
Jing Ma ◽  
Houbing Huang ◽  
Ji Ma ◽  
Hasnain Jafri ◽  
...  
Keyword(s):  
Domain Wall ◽  
Electric Field ◽  
Domain Walls ◽  
Logic Gates ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Domain ◽  
Conduction Path ◽  
Conductive Atomic Force Microscopy ◽  
Flexible Control ◽  
Force Microscopy

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

scholarly journals As-Grown Domain Structure in Calcium Orthovanadate Crystals

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1508
Author(s):  
Ekaterina Shishkina ◽  
Vladimir Yuzhakov ◽  
Maksim Nebogatikov ◽  
Elena Pelegova ◽  
Eduard Linker ◽  
...  
Keyword(s):  
Domain Structure ◽  
Domain Walls ◽  
Domain Switching ◽  
Second Harmonic ◽  
Threshold Value ◽  
Polar Component ◽  
Force Microscopy ◽  
Piezoelectric Force Microscopy ◽  
Mn Doped ◽  
Comprehensive Study

An as-grown domain structure in nominally pure and Mn-doped calcium orthovanadate (CVO) crystals was studied by several methods of domain imaging: optical microscopy, piezoelectric force microscopy, and Cherenkov-type second harmonic generation. The combination of imaging methods provided an opportunity for comprehensive study of the domain structure on the polar surface and in the bulk of the samples. It was shown that, in nominally pure CVO crystals, an irregular 3D maze of rounded domains, with charged walls, essentially tilted from the polar direction, was present. It was proposed that the domain structure was formed just below the phase transition temperature and persisted during subsequent cooling. Such behavior is due to effective bulk screening of the depolarization field and a low value of the pyroelectric field which appears during cooling. The revealed formation of triangular domains and flat fragments of domain walls in Mn-doped CVO was attributed to polarization reversal under the action of the polar component of the pyroelectric field, above the threshold value for domain switching. This fact represents the first observation of the domain switching in CVO crystals.

Piezoresponse Force Microscopy Studies of pc-BiFeO3 Thin Films Produced by the Simultaneous Laser Ablation of Bi and FeO3

2012 ◽  
Vol 1477 ◽  
Author(s):  
C. I. Enriquez-Flores ◽  
J. J. Gervacio-Arciniega ◽  
F. J. Flores-Ruiz ◽  
D. Cardona ◽  
E. Camps ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Domain Size ◽  
Piezoresponse Force Microscopy ◽  
Laser Deposition ◽  
Bismuth Iron Oxide ◽  
Deposition Technique ◽  
Force Microscopy ◽  
Bifeo3 Thin Films ◽  
Ferroelectric Domains

ABSTRACTBismuth iron oxide BFO films were produced by the pulsed laser deposition technique. These films are a mixture of BiFeO3 ferroelectrical and Bi25FeO40 piezoelectrical phases. The ferroelectrical domain structure of these films was studied via contact resonance piezoresponse force microscopy (CR-PFM) and resonance tracking PFM (RT-PFM). The proportions of area of these BFO phases were derived from the PFM images. The ferroelectrical domain size corresponds to the size of the BiFeO3 crystals. The CR-PFM and RT-PFM techniques allowed us to be able to distinguish between the ferroelectric domains and the piezoelectric regions existing in the polycrystalline films.

Differential Domain Wall Propagation in Y-Shaped Permalloy Nanowire Devices

SPIN ◽  
2016 ◽  
Vol 06 (01) ◽  
pp. 1650006 ◽  
Author(s):  
Bipul Das ◽  
Ting-Chieh Chen ◽  
Deng-Shiang Shiu ◽  
Lance Horng ◽  
Jong-Ching Wu
Keyword(s):  
Domain Wall ◽  
Magnetic Force ◽  
Magnetic Domain ◽  
Topological Defects ◽  
Circular Disk ◽  
Geometrical Shape ◽  
Magnetic Domain Wall ◽  
Force Microscopy ◽  
Junction Structure

Here, we report an investigation of magnetic domain wall (DW) evolution and propagation in Y-shaped permalloy (Py) nanowire (NW) devices. The devices are fabricated using standard electron-beam lithography technique. Each device consists of three connected NWs that form a Y-junction structure with one branch connecting either symmetrically or asymmetrically to a circular disk for DW nucleation. The DW dynamics in the devices are studied by in situ magnetic force microscopy (MFM) by pinning the DWs to triangular notches at each branch of the two devices. We observe that the DW injection field values differ depending on whether they are connected to the circular disks symmetrically or asymmetrically. However, after they pass the Y-junctions, a selection is made by the DWs to propagate easily either through both or through only one particular outgoing branch of the devices. The experimental observations are analyzed by micromagnetic simulation. It can be inferred from the results that the influence of detailed geometrical shape of the devices leads to significantly different interactions among the innate topological defects and the notches with the injected DWs.

In situ observation of the motion of ferroelectric domain walls in Bi4Ti3O12 single crystals

2016 ◽  
Vol 49 (5) ◽  
pp. 1645-1652 ◽  
Author(s):  
Wanneng Ye ◽  
Lingli Tang ◽  
Chaojing Lu ◽  
Huabing Li ◽  
Yichun Zhou
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Single Crystals ◽  
Transmission Electron Microscope ◽  
Domain Walls ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
In Situ Observation ◽  
Transmission Electron

Five types of ferroelectric domain walls (DWs) are present in Bi4Ti3O12 single crystals (Ye et al., 2015). Here their motion was investigated in situ using transmission electron microscopy and optical microscopy. The motion of P (a)-90° DWs, P (a)-180° DWs and P (c)-180° DWs was observed through electron beam poling in a transmission electron microscope. The growth of new P s(a)-180° nanodomains was frequently seen and they tended to nucleate at preexisting P s(a)-90° DWs. Irregularly curved P (c)-180° DWs exhibit the highest mobility, while migration over a short range occurs occasionally for faceted P s(a)-90° DWs. In addition, the motion of P s(a)-90° DWs and the growth/annihilation of new needle-like P s(a)-90° domains in a 20 µm-thick crystal were observed under an external electric field on an optical microscope. Most of the new needle-like P s(a)-90° domains nucleate at preexisting P s(a)-90° DWs and the former are much smaller than the latter. This is very similar to the situation for P s(a)-180° domain switching induced by electron beam poling in a transmission electron microscope. Our observations suggest the energy hierarchy for different domains of P s(c)-180° ≤ P s(a)-180° ≤ P s(a)-90° ≤ new needle-like P s(a)-90° in ferroelectric Bi4Ti3O12.

scholarly journals Investigations of ferroelectric polycrystalline bulks and thick films using piezoresponse force microscopy

2019 ◽  
Vol 475 (2223) ◽  
pp. 20180782 ◽  
Author(s):  
Hana Uršič ◽  
Uroš Prah
Keyword(s):  
Domain Walls ◽  
Thick Films ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Domain Structures ◽  
Atomic Force ◽  
Ferroelectric Domain Structure ◽  
Converse Piezoelectric Effect ◽  
Non Destructive

In recent years, ferroelectric/piezoelectric polycrystalline bulks and thick films have been extensively studied for different applications, such as sensors, actuators, transducers and caloric devices. In the majority of these applications, the electric field is applied to the working element in order to induce an electromechanical response, which is a complex phenomenon with several origins. Among them is the field-induced movement of domain walls, which is nowadays extensively studied using piezoresponse force microscopy (PFM), a technique derived from atomic force microscopy. PFM is based on the detection of the local converse piezoelectric effect in the sample; it is one of the most frequently applied methods for the characterization of the ferroelectric domain structure due to the simplicity of the sample preparation, its non-destructive nature and its relatively high imaging resolution. In this review, we focus on the PFM analysis of ferroelectric bulk ceramics and thick films. The core of the paper is divided into four sections: (i) introduction; (ii) the preparation of the samples prior to the PFM investigation; (iii) this is followed by reviews of the domain structures in polycrystalline bulks; and (iv) thick films.

Direct characterization of nanoscale domain switching and local piezoelectric loops of (Pb,La)TiO3 thin films by piezoresponse force microscopy

2005 ◽  
Vol 81 (6) ◽  
pp. 1207-1212 ◽  
Author(s):  
R. Poyato ◽  
M.L. Calzada ◽  
V.V. Shvartsman ◽  
A. Kholkin ◽  
P. Vilarinho ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Switching ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy
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