Resonant stimulated Raman scattering in NH3characterized by pump radiation depletion and a wide frequency tuning range

1988 ◽  
Vol 18 (2) ◽  
pp. 239-241 ◽  
Author(s):  
A N Bobrovskiĭ ◽  
A V Kozhevnikov ◽  
V A Mishchenko ◽  
G D Myl'nikov ◽  
O V Shpilyun
Keyword(s):  
Raman Scattering ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Stimulated Raman Scattering ◽  
Pump Radiation ◽  
Stimulated Raman

Frequency Modulation Applied to Stimulated Raman Scattering (SRS) for Linewidth and Temperature Measurement

1980 ◽  
Vol 34 (6) ◽  
pp. 617-621 ◽  
Author(s):  
P. E. Perkins
Keyword(s):  
Raman Scattering ◽  
Temperature Measurement ◽  
Frequency Modulation ◽  
Frequency Tuning ◽  
Stimulated Raman Scattering ◽  
Difference Frequency ◽  
Harmonic Content ◽  
Stimulated Raman

FM modulation is investigated as a technique for accurately measuring the linewidths of Lorentzian resonances observed by stimulated Raman scattering difference frequency tuning. A normalized linewidth is obtained from the ratio of the nth to the ( n + 1)th harmonic content of the detected signal. Possible applications in temperature measurement are discussed.

scholarly journals Перестройка спектра терагерцового стимулированного излучения при внутрицентровом оптическом возбуждении одноосно-деформированного Si : Bi

2020 ◽  
Vol 54 (8) ◽  
pp. 816
Author(s):  
Р.Х. Жукавин ◽  
К.А. Ковалевский ◽  
С.Г. Павлов ◽  
N. Deb mann ◽  
A. Pohl ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Frequency Tuning ◽  
Stimulated Raman Scattering ◽  
Uniaxial Stress ◽  
Emission Lines ◽  
Terahertz Emission ◽  
Theoretical Investigations ◽  
Silicon Doped ◽  
Stimulated Raman ◽  
Stressed Silicon

The results of experimental and theoretical investigations dedicated to the uniaxial stress induced tuning of terahertz stimulated terahertz emission from silicon doped with bismuth under optical intracenter excitation. The frequency tuning of two emission lines from bismuth donor in silicon under uniaxial stress along [001] has been demonstrated in the experiments. The crosssections of stimulated Raman scattering for uniaxially stressed silicon doped with bismuth donors have been calculated.

Extending the Tuning Range of Short-Pulse Lasers by Transient Stimulated Raman Scattering in Gases

2002 ◽  
Vol 216 (3) ◽  
Author(s):  
Ingo Fischer ◽  
V. Krylov ◽  
V. Bespalov ◽  
D. Staselko
Keyword(s):  
Raman Scattering ◽  
Convenient Method ◽  
Tuning Range ◽  
Stimulated Raman Scattering ◽  
Short Pulse ◽  
Pure Hydrogen ◽  
Short Pulse Lasers ◽  
Stimulated Raman

Transient stimulated Raman scattering (SRS) is a convenient method to extend the tuning range of short-pulse lasers. In this paper we present results obtained by using 400 nm pump pulses of 2.5 ps duration. After briefly reviewing earlier work on transient SRS in pure hydrogen and in H

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