Dependence of the self-modulation frequency on the parameters of a solid-state ring laser

1998 ◽  
Vol 28 (4) ◽  
pp. 350-354 ◽  
Author(s):  
D L Boiko ◽  
Nikolai V Kravtsov
2008 ◽  
Vol 38 (5) ◽  
pp. 482-485
Author(s):  
D A Aleshin ◽  
I I Zolotoverkh ◽  
N V Kravtsov ◽  
E G Lariontsev

2010 ◽  
Vol 40 (3) ◽  
pp. 199-202
Author(s):  
T V Aulova ◽  
I I Zolotoverkh ◽  
Nikolai V Kravtsov ◽  
E G Lariontsev ◽  
S N Chekina

Small ◽  
2021 ◽  
Vol 17 (31) ◽  
pp. 2170160
Author(s):  
Xue Wang ◽  
Yanan Liu ◽  
Huili Li ◽  
Tian Lv ◽  
Jun Wan ◽  
...  

1995 ◽  
Author(s):  
S. H. Son ◽  
J. M. Hong ◽  
H. J. Song ◽  
T. K. Sung ◽  
Sang K. Gil ◽  
...  

2003 ◽  
Vol 18 (1) ◽  
pp. 4-7 ◽  
Author(s):  
Y. C. Sohn ◽  
Jin Yu ◽  
S. K. Kang ◽  
W. K. Choi ◽  
D. Y. Shih

The reaction mechanism between electroless Ni–P and Sn was investigated to understand the effects of Sn on solder reaction-assisted crystallization at low temperatures as well as self-crystallization of Ni–P at high temperatures. Ni3Sn4 starts to form in a solid-state reaction well before Sn melts. Heat of reaction for Ni3Sn4 was measured during the Ni–P and Sn reaction (241.2 J/g). It was found that the solder reaction not only promotes crystallization at low temperatures by forming Ni3P in the P-rich layer but also facilitates self-crystallization of Ni–P by reducing the transformation temperature and heat of crystallization. The presence of Sn reduces the self-crystallization temperature of Ni–P by about 10 °C. The heat of crystallization also decreases with an increased Sn thickness.


1977 ◽  
Vol 7 (5) ◽  
pp. 616-618 ◽  
Author(s):  
A V Dotsenko ◽  
E G Lariontsev
Keyword(s):  

2008 ◽  
Vol 38 (10) ◽  
pp. 956-960 ◽  
Author(s):  
I I Zolotoverkh ◽  
A A Kamysheva ◽  
N V Kravtsov ◽  
E G Lariontsev ◽  
V V Firsov ◽  
...  

2009 ◽  
Vol 34 (24) ◽  
pp. 3884 ◽  
Author(s):  
Sylvain Schwartz ◽  
François Gutty ◽  
Gilles Feugnet ◽  
Éric Loil ◽  
Jean-Paul Pocholle

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