Changes in the structure of polymethyl methacrylate caused by irradiation with millisecond laser pulses

1998 ◽  
Vol 28 (11) ◽  
pp. 997-1001
Author(s):  
Sergei V Vasil'ev ◽  
V V Voina ◽  
A Yu Ivanov ◽  
V A Liopo
2017 ◽  
Vol 18 (3) ◽  
pp. 309-312
Author(s):  
O.Yu. Bonchyk ◽  
S.G. Kiyak ◽  
I.A. Mohylyak ◽  
D.I. Popovych

The experimental studies of geometry features of silicon layers in areas of second and millisecond laser pulses were carried out. The results of microscopic studies of periodic structures that are formed on the surfaces with crystallographic orientation (111) (110) (100) and on planes, cut at an angle of 6° to the plane (100) and amorphous layers В2О3 deposited on the surface of silicon were presented. The results can be used to determine the crystallographic orientation of the semiconductor surface and express assessment of disorientation degree of crystal surface.


Author(s):  
C.A. Conti ◽  
C.J. Doherty ◽  
K.C.R. Chiu ◽  
T.T. Sheng ◽  
H.J. Leamy

1976 ◽  
Vol 6 (7) ◽  
pp. 850-853 ◽  
Author(s):  
Nikolai E Kask ◽  
L S Kornienko ◽  
V V Radchenko ◽  
Gennadii M Fedorov ◽  
D B Chopornyak

2014 ◽  
Vol 56 (12) ◽  
pp. 1357-1362 ◽  
Author(s):  
É. D. Aluker ◽  
A. S. Zverev ◽  
A. G. Krechetov ◽  
A. Yu. Mitrofanov ◽  
A. O. Terent’eva ◽  
...  

1988 ◽  
Vol 129 ◽  
Author(s):  
S. Küper ◽  
M. Stuke

ABSTRACTExperiments on the ablation of undoped polytetrafluoroethylene (teflon), monocrystalline sodium chloride (NaCl) and polymethyl-methacrylate (PMMA) with 300 fs uv excimer laser pulses at 248 nm are reported. In contrast to standard 16 ns excimer laser pulses, these ultrashort pulses ablate essentially uv-transparent materials, heretofore not accessible to clean ablation, with good edge quality and no signs of thermal damage, with removal rates are on the order of one micrometer per pulse.


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