Investigation of optical properties of multilayer dielectric structures using prism-coupling technique

2015 ◽  
Vol 45 (9) ◽  
pp. 868-872 ◽  
Author(s):  
V I Sokolov ◽  
V N Glebov ◽  
A M Malyutin ◽  
S I Molchanova ◽  
E V Khaydukov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Coupling Technique ◽  
Prism Coupling ◽  
Dielectric Structures ◽  
Multilayer Dielectric

Investigation on optical properties of Bi2.85La0.15TiNbO9 thin films by prism coupling technique

2009 ◽  
Vol 97 (4) ◽  
pp. 741-744 ◽  
Author(s):  
Mingfu Zhang ◽  
Hengzhi Chen ◽  
Bin Yang ◽  
Wenwu Cao
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Coupling Technique ◽  
Prism Coupling

scholarly journals Prism coupling technique investigation of elasto-optical properties of thin polymer films

2004 ◽  
Vol 96 (12) ◽  
pp. 7147-7153 ◽  
Author(s):  
Feridun Ay ◽  
Askin Kocabas ◽  
Coskun Kocabas ◽  
Atilla Aydinli ◽  
Sedat Agan
Keyword(s):  
Optical Properties ◽  
Polymer Films ◽  
Thin Polymer Films ◽  
Coupling Technique ◽  
Thin Polymer ◽  
Prism Coupling

Optical Properties of Gallium Nitride Heterostructures Grown on Silicon for Waveguiding Application

2014 ◽  
Vol 980 ◽  
pp. 41-45
Author(s):  
Irma Saraswati ◽  
Arnaud Stolz ◽  
S. Ko ◽  
Elhadj Dogheche ◽  
Nji Raden Poespawati ◽  
...  
Keyword(s):  
Optical Properties ◽  
Gallium Nitride ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Smooth Surface ◽  
Optoelectronic Devices ◽  
Coupling Technique ◽  
Prism Coupling ◽  
Algan Buffer

Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si (111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM observations, we have observed that the films exhibit a good quality: the films are highly oriented (0001) with a smooth surface morphology (roughness of 12nm). We have completely characterized the optical properties using the prism coupling technique.

Optical Waveguides in Thermally Grown SiO2 on Si Using Nitrogen Ion Implantation

1991 ◽  
Vol 244 ◽  
Author(s):  
S. P. Wong ◽  
E. Y. B. Pun ◽  
W. T. Lam ◽  
P. S. Chung
Keyword(s):  
Optical Waveguides ◽  
Nitrogen Concentration ◽  
Silicon Substrates ◽  
Optical Wave ◽  
Implantation Energy ◽  
Coupling Technique ◽  
Waveguide Loss ◽  
Prism Coupling ◽  
Nitrogen Ion ◽  
Thermally Grown

ABSTRACTMulti-energy nitrogen implantation into thermally grown SiO2 on silicon substrates has been performed and the optical wave-guiding properties of this structure has been studied. The implantation energy used was in Ie range of 40 KeV to 150 keV, and the doses used were typically 2×1016 to 2×10−2. The energies and doses were chosen to achieve relatively flat implanted nitrogen profiles. It is found that optical waveguides can be formed when the implanted nitrogen concentration is sufficiently high. Both prism-coupling technique and end-fire coupling technique were used to test the implanted waveguides fabricated. Many m-lines including dark modes were observed by the prism-coupling method. This structure is found to be very stable against thermal annealing and there is no significant change observed in the waveguiding properties even after annealing at 1000 °C for four hours. The waveguide loss was found to be typically 0.6 dB/cm before annealing and can be further reduced to about 0.3 dB/cm after annealing.

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