Optical Waveguides in Thermally Grown SiO2 on Si Using Nitrogen Ion Implantation

ABSTRACTMulti-energy nitrogen implantation into thermally grown SiO2 on silicon substrates has been performed and the optical wave-guiding properties of this structure has been studied. The implantation energy used was in Ie range of 40 KeV to 150 keV, and the doses used were typically 2×1016 to 2×10−2. The energies and doses were chosen to achieve relatively flat implanted nitrogen profiles. It is found that optical waveguides can be formed when the implanted nitrogen concentration is sufficiently high. Both prism-coupling technique and end-fire coupling technique were used to test the implanted waveguides fabricated. Many m-lines including dark modes were observed by the prism-coupling method. This structure is found to be very stable against thermal annealing and there is no significant change observed in the waveguiding properties even after annealing at 1000 °C for four hours. The waveguide loss was found to be typically 0.6 dB/cm before annealing and can be further reduced to about 0.3 dB/cm after annealing.

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Optical Waveguides In BenzoCyclobutene (BCB 4024–40) Polymer

Jurnal Teknologi ◽

10.11113/jt.v53.105 ◽

2012 ◽

Author(s):

Mohd Haniff Ibrahim ◽

Norazan Mohd Kassim ◽

Abu Bakar Mohammad ◽

Mee–Koy Chin ◽

Shuh–Ying Lee

Keyword(s):

Spin Coating ◽

Optical Waveguides ◽

Chemical Etching ◽

Single Mode ◽

Etching Technique ◽

Waveguide Loss ◽

Bk7 Glass ◽

Average Loss ◽

Fabrication And Characterization ◽

Prism Coupling

Proses fabrikasi dan pencirian bagi pandu gelombang optik mod tunggal yang berdasarkan bahan polimer sensitif cahaya, BenzoCyclobutene (BCB 4024–40) dibincangkan. Ketebalan filem polimer bagi pelbagai kelajuan putaran enapan dan indeks biasan polimer diukur menggunakan kaedah prisma gandingan. Pandu gelombang ini difabrikasi menggunakan kaedah fotolitografi dan punaran kimia basah di atas bahan kaca BK7 dan lapisan nipis SiO2 sebagai pelindung. Kehilangan pandu gelombang diukur menggunakan kaedah konvensional ‘cut back’ yang menghasilkan purata kehilangan sebanyak 3.5 dB/cm. Kata kunci: Polimer BenzoCyclobutene; kaedah putaran enapan; kaedah punaran kimia basah; prisma gandingan The fabrication and characterization processes of single mode optical waveguide based on photosensitive BenzoCyclobutene (BCB 4024–40) polymer are described. The polymer film thickness for various coating speed and refractive index are measured by the method of prism coupling. The waveguide is fabricated using the photolithography and chemical etching technique on BK7 glass substrate with a thin layer of SiO2 as cover. The waveguide loss is measured using the conventional cut back method which results on an average loss of 3.5 dB/cm. Key words: BenzoCyclobutene polymer; spin coating technique; chemical etching technique; prism coupling; cutback method

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Low‐loss integrated optical waveguides fabricated by nitrogen ion implantation

Applied Physics Letters ◽

10.1063/1.94423 ◽

1983 ◽

Vol 43 (6) ◽

pp. 519-520 ◽

Cited By ~ 49

Author(s):

I. K. Naik

Keyword(s):

Ion Implantation ◽

Optical Waveguides ◽

Low Loss ◽

Nitrogen Ion Implantation ◽

Integrated Optical ◽

Nitrogen Ion ◽

Integrated Optical Waveguides

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Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control

MRS Proceedings ◽

10.1557/proc-716-b7.5 ◽

2002 ◽

Vol 716 ◽

Cited By ~ 4

Author(s):

Takaaki Amada ◽

Nobuhide Maeda ◽

Kentaro Shibahara

Keyword(s):

Ion Implantation ◽

Work Function ◽

Nitrogen Concentration ◽

Implantation Dose ◽

Control Technique ◽

High Dose ◽

Implantation Energy ◽

20 Nm ◽

Large Work ◽

Gate Work Function

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

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Broad band Bragg deflector for optical waveguides on silicon substrates

Optics & Laser Technology ◽

10.1016/0030-3992(86)90042-3 ◽

1986 ◽

Vol 18 (2) ◽

pp. 89-92 ◽

Cited By ~ 8

Author(s):

P. Mottier ◽

S. Valette ◽

J.P. Jadot

Keyword(s):

Optical Waveguides ◽

Broad Band ◽

Silicon Substrates

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Investigation on optical properties of Bi2.85La0.15TiNbO9 thin films by prism coupling technique

Applied Physics A ◽

10.1007/s00339-009-5421-x ◽

2009 ◽

Vol 97 (4) ◽

pp. 741-744 ◽

Cited By ~ 3

Author(s):

Mingfu Zhang ◽

Hengzhi Chen ◽

Bin Yang ◽

Wenwu Cao

Keyword(s):

Thin Films ◽

Optical Properties ◽

Coupling Technique ◽

Prism Coupling

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Elasto-Optical Properties of Thin Polymer Films by Prism Coupling Technique

10.1063/1.1764045 ◽

2004 ◽

Cited By ~ 1

Author(s):

Feridun Ay

Keyword(s):

Optical Properties ◽

Polymer Films ◽

Thin Polymer Films ◽

Coupling Technique ◽

Thin Polymer ◽

Prism Coupling

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Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry

10.1520/f2139-01 ◽

2001 ◽

Author(s):

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Nitrogen Concentration ◽

Test Method ◽

Silicon Substrates ◽

Ion Mass Spectrometry ◽

Secondary Ion

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The Physical and Electrical Properties of Buried Nitride Soi Structures Synthesized By Nitrogen Ion Implantation

MRS Proceedings ◽

10.1557/proc-53-269 ◽

1985 ◽

Vol 53 ◽

Cited By ~ 2

Author(s):

C. Slawinski ◽

B.-Y. Mao ◽

P.-H. Chang ◽

H.W. Lam ◽

J.A. Keenan

Keyword(s):

Ion Implantation ◽

Nitrogen Concentration ◽

Silicon Film ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Silicon On Insulator ◽

Crystal Silicon ◽

Nitrogen Ion Implantation ◽

Donor Formation ◽

Nitrogen Ion

ABSTRACTBuried nitride silicon-on-insulator (SOI) structures have been fabricated using the technique of nitrogen ion implantation. The crystallinity of the top silicon film was found to be exceptionally good. The minimum channeling yield, Xmin' was better than 3%. This is comparable to the value observed for single crystal silicon. The buried insulator formed during the anneals has been identified as polycrystalline α-Si3 N4 with numerous silicon inclusions. This nitride, however, has been found to remain amorphous in regions at the center of the implant where the nitrogen concentration exceeds the stoichiometric level of Si3N4. Nitrogen donor formation in the top silicon layer has also been observed.

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