algan buffer
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High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

2021 ◽  
Vol 118 (5) ◽  
pp. 052104
Author(s):  
Yuxia Feng ◽  
Huarui Sun ◽  
Xuelin Yang ◽  
Kang Liu ◽  
Jie Zhang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
High Quality ◽  
Algan Buffer

Fabrication of Crack-Free Metal-Semiconductor-Metal Ultraviolet Photodetectors on Si (111) Substrates Based on Novel AlN/AlGaN Buffer Multilayer Scheme

2019 ◽  
Vol 11 (5) ◽  
pp. 117-128
Author(s):  
Ricky W. Chuang ◽  
S. J. Chang ◽  
S. P. Chang
Keyword(s):  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors ◽  
Free Metal ◽  
Algan Buffer

Investigation into the carrier distribution and energy-band profile in AlGaN/GaN heterostructures with a graded AlGaN buffer

2018 ◽  
Vol 33 (11) ◽  
pp. 115018 ◽  
Author(s):  
Tiecheng Han ◽  
Hongdong Zhao ◽  
Liying Han ◽  
Xiaocan Peng ◽  
Yuhai Li
Keyword(s):  
Energy Band ◽  
Carrier Distribution ◽  
Band Profile ◽  
Algan Buffer

Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiNx interlayer

2018 ◽  
Vol 122 ◽  
pp. 74-79 ◽  
Author(s):  
Gaoqiang Deng ◽  
Yuantao Zhang ◽  
Ye Yu ◽  
Zhen Huang ◽  
Xu Han ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Algan Buffer

Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers

2017 ◽  
Vol 122 (10) ◽  
pp. 105306 ◽  
Author(s):  
Shane Chang ◽  
Lin Lung Wei ◽  
Tien Tung Luong ◽  
Ching Chang ◽  
Li Chang
Keyword(s):  
Buffer Layers ◽  
Threading Dislocation ◽  
Dislocation Reduction ◽  
Algan Buffer

Effect of various Fe-doped AlGaN buffer layer of AlGaN/GaN HEMTs on Si substrate

2017 ◽  
Vol 35 (4) ◽  
pp. 041205 ◽  
Author(s):  
Hsien-Chin Chiu ◽  
Shang-Cyun Chen ◽  
Jiun-Wei Chiu ◽  
Bo-Hong Li ◽  
Rong Xuan ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Si Substrate ◽  
Gan Hemts ◽  
Algan Buffer

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

2017 ◽  
Vol 214 (3) ◽  
pp. 1600618 ◽  
Author(s):  
Yuya Yamaoka ◽  
Ken Kakamu ◽  
Akinori Ubukata ◽  
Yoshiki Yano ◽  
Toshiya Tabuchi ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Al Content ◽  
Algan Buffer
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