Doping dependence of the bulk quantum efficiency in electron-beam-excited n-type GaAs at 300°K†

1971 ◽  
Vol 31 (4) ◽  
pp. 407-413
Author(s):  
S. N. BISWAS ◽  
S. RAKSHIT ◽  
A. N. CHAKRAVARTI
Keyword(s):  
Electron Beam ◽  
Quantum Efficiency ◽  
Doping Dependence

Temperature Dependent Photoluminescence of ZnSe/Alq3 Hybrid Heterostructure

2008 ◽  
Vol 55-57 ◽  
pp. 493-496
Author(s):  
Wisanu Pecharapa ◽  
P. Potirak ◽  
W. Yindeesuk
Keyword(s):  
Electron Beam ◽  
Quantum Efficiency ◽  
Exciton State ◽  
Temperature Dependent ◽  
Pl Spectra ◽  
20 Nm ◽  
Temperature Dependent Photoluminescence

II-VI inorganic/organic heterostructures consisting of ZnSe and tris(8-hydroxyquinoline) aluminum (Alq3) were prepared by electron beam evaporator. Alq3 layer with 20 nm was grown between 200-nm ZnSe layers. Photoluminescence measurement was conducted at various temperatures in order to investigate the important temperature-dependent parameters of this structure. PL spectra revealed thermal population of exciton state and the change in PL quantum efficiency of the film.

Quantum efficiency of electron-beam pumped GaAs lasers

1967 ◽  
Vol 3 (11) ◽  
pp. 641-642 ◽  
Author(s):  
J. Lavine ◽  
A. Adams
Keyword(s):  
Electron Beam ◽  
Quantum Efficiency
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