Temperature dependence of the internal quantum efficiency of spontaneous emission in p-type GaAs excited by a 30 kV electron beam

1971 ◽  
Vol 36 (2) ◽  
pp. 119-120
Author(s):  
S. Rakshit ◽  
S.N. Biswas ◽  
A.N. Chakravarti
Keyword(s):  
Electron Beam ◽  
Temperature Dependence ◽  
Quantum Efficiency ◽  
Spontaneous Emission ◽  
Internal Quantum Efficiency ◽  
P Type

Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 585-588 ◽  
Author(s):  
Takashi Kojima ◽  
Hiroyuki Nakaya ◽  
Suguru Tanaka ◽  
Hideo Yasumoto ◽  
andShigehisa Arai
Keyword(s):  
Temperature Dependence ◽  
Quantum Efficiency ◽  
Quantum Wire ◽  
Internal Quantum Efficiency ◽  
20 Nm

Temperature Dependence of the Internal Quantum Efficiency of Cu(In,Ga)Se2-Based Solar Cells

2018 ◽  
Vol 8 (6) ◽  
pp. 1868-1874 ◽  
Author(s):  
Marek Pawlowski ◽  
Marek Maciaszek ◽  
Pawel Zabierowski ◽  
Tomasz Drobiazg ◽  
Nicolas Barreau
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency

scholarly journals High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Abbas Sabbar ◽  
Syam Madhusoodhanan ◽  
Sattar Al-Kabi ◽  
Binzhong Dong ◽  
Jiangbo Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Spontaneous Emission ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum ◽  
Power Electronic ◽  
Light Emitting ◽  
Red Led

AbstractCommercial light emitting diode (LED) materials - blue (i.e., InGaN/GaN multiple quantum wells (MQWs) for display and lighting), green (i.e., InGaN/GaN MQWs for display), and red (i.e., Al0.05Ga0.45In0.5P/Al0.4Ga0.1In0.5P for display) are evaluated in range of temperature (77–800) K for future applications in high density power electronic modules. The spontaneous emission quantum efficiency (QE) of blue, green, and red LED materials with different wavelengths was calculated using photoluminescence (PL) spectroscopy. The spontaneous emission QE was obtained based on a known model so-called the ABC model. This model has been recently used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED. At 800 K, the spontaneous emission quantum efficiencies are around 40% for blue for lighting and blue for display LED materials, and it is about 44.5% for green for display LED materials. The spontaneous emission QE is approximately 30% for red for display LED material at 800 K. The advance reported in this paper evidences the possibility of improving high temperature optocouplers with an operating temperature of 500 K and above.

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