Analysis the influence of pulse-to-pulse stability of modulator on high-power microwave output of pulsed klystron

X-ray free electron laser (XFEL) facility based on electron linear accelerator (LINAC) is regarded as one kind of the fourth-generation light source with the characteristics of high intensity, exceptional brightness, ultrashort pulse duration, and spatial coherence. In electron linear accelerator, energy of beam bunches is provided by high-power electromagnetic microwaves which are generated by a microwave tube called klystron. The stability of beam voltage of klystron occupies a key position in both the stability of output RF (Radio Frequency) power and the jitter of output RF phase, furthermore, it plays an extremely important role in beam energy stability of electron linear accelerator. In this paper, high power RF fluctuation and phase jitter of klystron output caused by beam voltage instability of klystron are analyzed and calculated. Influence of klystron beam voltage instability on beam energy gain in linear accelerator have also been further analyzed and calculated. The calculating procedure is particularly valuable for us to understand the relationship between pulse modulator stability and beam energy gain fluctuations. Finally, relevant experimental results measured by Shanghai Soft X-ray Free Electron Laser Test Facility (SXFEL-TF) is presented.

Ultra-High Velocity Ratio in Magnetron Injection Guns for Low-Voltage Compact Gyrotrons

Low-voltage compact gyrotron is under development at the University of Electronic Science and Technology of China (UESTC) for industrial applications. Due to the low operating voltage, the relativistic factor is weak, and interaction efficiency could not be high. Therefore, a magnetron-injection gun (MIG) with an extremely high-velocity ratio α (around 2.5) is selected to improve the interaction efficiency. As beam voltage drops, space charge effects become more and more obvious, thus a more detailed analysis of velocity-ratio α is significant to perform low-voltage gyrotrons, including beam voltage, beam current, modulating voltage, depression voltage, cathode magnetic field, and magnetic depression ratio. Theoretical analysis and simulation optimization are adopted to demonstrate the feasibility of an ultra-high velocity ratio, which considers the space charge effects. Based on theoretical analysis, an electron gun with a transverse to longitudinal velocity ratio 2.55 and velocity spread 9.3% is designed through simulation optimization. The working voltage and current are 10 kV and 0.46 A with cathode emission density 1 A/cm2 for a 75 GHz hundreds of watts’ output power gyrotron.

Primary Design of Extended Interaction Klystron with Multi-Gap Cavity at 225 GHz

The analytical expressions of the beam–wave coupling coefficients and the beam loading conductance for a 2π mode in a multi-gap cavity is proposed as a circuit of the extended interaction klystron (EIK), are derived by space-charge wave theory. The mechanism of the beam–wave synchronization and the coupling in the multi-gap cavity at 225 GHz are studied in detail by calculating the coupling coefficient and the normalized beam loading conductance as a function of gap number, gap dimension, and beam voltage as well as the perveance. The stability of the circuit is analyzed by considering the quality factor of the electron beam. It is found that the stability of the operating 2π mode is more sensitive to the beam voltage and gap number. Based on the theory and analysis, a 5-gap coupled cavity is proposed as a section of EIK’s circuit. A low voltage EIK with a 4-cavity circuit at 225 GHz is designed and is simulated by a particle-in-cell (PIC) code. The EIK can achieve a maximum output power of ~36 W with more than 30 dB gain at 225 GHz.

A Discussion of Dielectric Film Deformation by E-Beam Energy

A recently developed technique known as Electron Beam Induced Resistance Change (EBIRCH) equipped with a scanning electron microscope (SEM) utilizes a constant electron beam (e-beam) voltage across or current through the defect of interest and amplifies its resistance variation. In this study, EBIRCH is applied for a 3D NAND structure device fault isolation but suffered from nearby dielectric film deformation. The characterization of such dielectric deformation and the possible mechanisms of e-beam induced damage are discussed. As well, a threshold condition to avoid from triggering the occurrence of dielectric damage is presented for shallow defect analysis in EBIRCH application.

Ion Beam Etch for Patterning of Resistive RAM (ReRAM) Devices

ABSTRACTWe investigate the feasibility of inert ion beam etch (IBE) for subtractive patterning of ReRAM-type structures. We report on the role of the angle-dependent ion beam etch rates in device area control and the minimization of sidewall re-deposition. The etch rates of key ReRAM materials are presented versus incidence angle and ion beam energy. As the ion beam voltage is increased, we demonstrate a significant enhancement in the relative etch rate at glancing incidence (for example, by a factor of 2 for HfO2). Since the feature sidewall is typically exposed to glancing incidence, this energy-dependence plays a role in optimization of the feature shape and in sidewall re-deposition removal.We present results of SRIM simulations to estimate depth of ion-bombardment damage to the TMO sidewall. Damage is minimized by minimizing ion energy; its depth can be reduced by roughly a factor of 5 over typical IBE energy ranges. For example, ion energies of less than ∼250 eV are indicated to maintain damage below ∼1nm. Multi-angle and multi-energy etch schemes are proposed to maximize sidewall angle and minimize damage, while eliminating re-deposition across the TMO. We utilize 2-D geometry/3-D etch model to simulate IBE patterning of tight-pitched ReRAM features, and generate etched feature shapes.