Dielectric properties and modulus behavior of La0.67Sr0.16Ca0.17MnO3 ceramic prepared by solid state reaction

2019 ◽  
Vol 92 (6) ◽  
pp. 546-555 ◽  
Author(s):  
Za Mohamed ◽  
A. Somrani ◽  
E. K. Hlil ◽  
K. Khirouni
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Solid State Reaction

Effect of Nd3+ substitution for Bi3+ on the dielectric properties and conduction behavior of Aurivillius NdBi4Ti3FeO15 ceramics

RSC Advances ◽  
2016 ◽  
Vol 6 (25) ◽  
pp. 21254-21260 ◽  
Author(s):  
Fida Rehman ◽  
Hai-Bo Jin ◽  
Lin Wang ◽  
Abbas Tanver ◽  
De-Zhi Su ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Solid State Reaction ◽  
Conduction Behavior

NdBi4Ti3FeO15 and Bi5Ti3FeO15 ceramics were prepared by solid state reaction.

Dielectric Properties of Ba(Mg0.2/3Zn0.8/3Nb2/3)O3 and Ba1-xSrx(Mg0.2/3Zn0.8/3Nb2/3)O3 Microwave Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 272-274
Author(s):  
S.S. Cheng ◽  
J. Luo ◽  
Zhao Xian Xiong
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Resonant Frequency ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Zero Temperature ◽  
Microwave Ceramics ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Zn Ions

Microwave ceramics of Ba(Mg0.2/3Zn0.8/3Nb2/3)O3 and Ba1-xSrx(Mg0.2/3Zn0.8/3Nb2/3)O3 were synthesized with conventional solid-state reaction method. Dielectric properties of the samples were studied as functions of compositions and sintering temperatures. Experimental results show that a higher Q×f value is reached by substituting Zn ions with Mg ions and a near-zero temperature coefficient of resonant frequency is obtained by replacing Ba ions with Sr ions.

Synthesis and Characterization of BaTiO3-(Bi0.5Na0.5)TiO3 Solid Solution Based Dielectric Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 1160-1164
Author(s):  
Guo Feng Yao ◽  
Xiao Hui Wang ◽  
Long Tu Li
Keyword(s):  
Solid Solution ◽  
Dielectric Properties ◽  
Solid State ◽  
Curie Temperature ◽  
Solid Solutions ◽  
Solid State Reaction ◽  
Synthesis And Characterization ◽  
Conventional Solid State Reaction ◽  
Dielectric Ceramics

BaTiO3-(Bi0.5Na0.5)TiO3 (BTBNT) solid solution ceramics with the Curie temperature higher than 150°C were prepared, which were promising for X9R MLCCs application. (Bi0.5Na0.5)TiO3 (BNT) was first synthesized by the conventional solid state reaction and then it was mixed with BaTiO3 (BT) with increasing BNT content from 0 to 12 mol%. BaTiO3-(Bi0.5Na0.5TiO3 solid solutions were obtained after calcining at 1100°C. The structural and dielectric properties of BTBNT and Nb-doped BTBNT ceramics were investigated.

Effects of Mg2SiO4 Addition on the Microstructure and Dielectric Properties of MgTiO3-CaTiO3 Ceramics

2013 ◽  
Vol 675 ◽  
pp. 200-204
Author(s):  
Fei Shi ◽  
Peng Cheng Du ◽  
Jing Xiao Liu ◽  
Ji Wei Wu ◽  
De Qing Chen ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Solid State ◽  
Dielectric Loss ◽  
Solid State Reaction ◽  
Sintering Temperature ◽  
Solid State Reaction Method ◽  
Composite Ceramics ◽  
Reaction Method ◽  
Dielectric Ceramics

The Mg2SiO4-MgTiO3-CaTiO3 composite dielectric ceramics with different Mg2SiO4 addition amounts were prepared by solid state reaction method. The effects of Mg2SiO4 addition amounts on the microstructure and dielectric properties as well as sintering temperature of xMg2SiO4-(0.95-x)MgTiO3-0.05CaTiO3 (abbreviated as xMSTC, 0.25≦x≦0.75) composite ceramics were investigated. The results indicated that the sintering temperature of MgTiO3-CaTiO3 based ceramics with Mg2SiO4 addition could be lowered effectively to 1320~1340°C, and the dielectric constant decreased and dielectric loss increased gradually with the increase of Mg2SiO4 content. The 0.45MSTC ceramics containing 45 wt% Mg2SiO4 and sintered at 1340°C showed desirable dielectric properties with dielectric constant εr=13.3，dielectric loss tanδ=4.5×10-4 and temperature coefficient of relative permittivity τε =10 ppm/°C.

Structure and Dielectric Properties of Homogeneous Srm-3Bi4TimO3m+3 (m = 3, 4, 5, and 6) Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 133-135 ◽  
Author(s):  
Wang Sheng Fang ◽  
Pi Yi Du ◽  
Wen Jian Weng ◽  
Gao Rong Han
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Curie Temperature ◽  
Solid State Reaction ◽  
Hysteresis Loops ◽  
Reaction Process ◽  
Conventional Solid State Reaction ◽  
Crystalline Phases ◽  
Impedance Analyzer ◽  
Phase Structures

Srm-3Bi4TimO3m+3 (m =3, 4, 5, and 6) bulk ceramics were prepared by conventional solid-state reaction process. Their phase structures and morphologies were observed by XRD and SEM respectively. The dielectric properties and hysteresis loops of the ceramics were measured by impedance analyzer and hysteresis meter respectively. Results showed that the lattice parameters along the c axis are 32.79, 41.11, 48.83, and 58.17Ǻ for m=3, 4, 5, and 6 respectively. The microstructures of plate-like crystalline phases are shown in all the ceramics with different m. Curie temperature of Srm-3Bi4TimO3m+3 decreases from 668°C to 295°C with increasing m from 3 to 6. The remnant polarizations Pr are 32.46 and 19.44 μC/cm2 for odd m of 3 and 5, and 11.84 and 10.58 μC/cm2 for even m of 4 and 6 respectively.

scholarly journals Dielectric properties of the BaTi0.85Zr0.15O3 ceramics prepared by different techniques

2008 ◽  
Vol 2 (2) ◽  
pp. 81-88 ◽  
Author(s):  
Petronela Curecheriu ◽  
Raluca Frunza ◽  
Adelina Ianculescu
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Dielectric Relaxation ◽  
Solid State Reaction ◽  
Precipitation Method ◽  
Relaxation Phenomena ◽  
Solid State Reaction Technique ◽  
Highly Sensitive ◽  
Preparation Route ◽  
Oxalate Route

Three different processing routes, i.e. the classical solid state reaction technique the sol-precipitation method and the oxalate route, were employed for preparing BaTi0.85Zr0.15O3 ceramics. The dielectric properties of these ceramics are comparatively analyzed. The obtained results show that the dielectric properties of these ceramics, even having the same composition, are highly sensitive to the preparation route, causing differences in the microstructures and in the local electrical inhomogeneity, thus, causing complicated dielectric relaxation phenomena.

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