Vacancy loops and stacking-fault tetrahedra in copper

1999 ◽  
Vol 79 (9) ◽  
pp. 2285-2311 ◽  
Author(s):  
Yu. N. Osetsky ◽  
A. Serra ◽  
M. Victoria ◽  
S. I. Golubov ◽  
V. Priego
1999 ◽  
Vol 79 (9) ◽  
pp. 2259-2283 ◽  
Author(s):  
Yu. N. Osetsky ◽  
A. Serra ◽  
M. Victoria ◽  
S. I. Golubov ◽  
V. Priego

Author(s):  
L. J. Sykes ◽  
J. J. Hren

In electron microscope studies of crystalline solids there is a broad class of very small objects which are imaged primarily by strain contrast. Typical examples include: dislocation loops, precipitates, stacking fault tetrahedra and voids. Such objects are very difficult to identify and measure because of the sensitivity of their image to a host of variables and a similarity in their images. A number of attempts have been made to publish contrast rules to help the microscopist sort out certain subclasses of such defects. For example, Ashby and Brown (1963) described semi-quantitative rules to understand small precipitates. Eyre et al. (1979) published a catalog of images for BCC dislocation loops. Katerbau (1976) described an analytical expression to help understand contrast from small defects. There are other publications as well.


2002 ◽  
Vol 124 (3) ◽  
pp. 329-334 ◽  
Author(s):  
B. D. Wirth ◽  
V. V. Bulatov ◽  
T. Diaz de la Rubia

In copper and other face centered cubic metals, high-energy particle irradiation produces hardening and shear localization. Post-irradiation microstructural examination in Cu reveals that irradiation has produced a high number density of nanometer sized stacking fault tetrahedra. The resultant irradiation hardening and shear localization is commonly attributed to the interaction between stacking fault tetrahedra and mobile dislocations, although the mechanism of this interaction is unknown. In this work, we present results from a molecular dynamics simulation study to characterize the motion and velocity of edge dislocations at high strain rate and the interaction and fate of the moving edge dislocation with stacking fault tetrahedra in Cu using an EAM interatomic potential. The results show that a perfect SFT acts as a hard obstacle for dislocation motion and, although the SFT is sheared by the dislocation passage, it remains largely intact. However, our simulations show that an overlapping, truncated SFT is absorbed by the passage of an edge dislocation, resulting in dislocation climb and the formation of a pair of less mobile super-jogs on the dislocation.


2007 ◽  
Vol 99 (13) ◽  
Author(s):  
B. P. Uberuaga ◽  
R. G. Hoagland ◽  
A. F. Voter ◽  
S. M. Valone

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