An extension of the multiple-trapping model for transient photocurrents in amorphous semiconductors

1989 ◽  
Vol 60 (4) ◽  
pp. 523-529 ◽  
Author(s):  
M. Abraham ◽  
V. Halpern
Keyword(s):  
Amorphous Semiconductors ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model

scholarly journals Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors

2020 ◽  
Vol 66 (5 Sept-Oct) ◽  
pp. 643
Author(s):  
F. Serdouk ◽  
A. Boumali ◽  
A. Makhlouf ◽  
M.L. Benkhedi
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Time Of Flight ◽  
Amorphous Semiconductors ◽  
Charge Carrier Transport ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model ◽  
A Current ◽  
Photo Current

This paper is devoted to investigating the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. For this, we at first modified the multi–trapping model (MTM) of charge carriers in amorphous semiconductors from time-of-flight (TOF) transient photo-current in the framework of the q-derivative formalism, and then, we have constructed, our simulated current by using a method based on the Laplace method. This method is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion.

The multiple‐trapping model and hole transport in SiO2

1977 ◽  
Vol 48 (9) ◽  
pp. 3819-3828 ◽  
Author(s):  
O. L. Curtis ◽  
J. R. Srour
Keyword(s):  
Hole Transport ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model

A multiple-trapping model with optical bias

1985 ◽  
Vol 52 (6) ◽  
pp. 1075-1095 ◽  
Author(s):  
R. Pandya ◽  
E. A. Schiff
Keyword(s):  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model

Multiple-Trapping Model for the Charge Recombination Dynamics in Mesoporous-Structured Perovskite Solar Cells

ChemSusChem ◽  
2017 ◽  
Vol 10 (24) ◽  
pp. 4872-4878 ◽  
Author(s):  
Hao-Yi Wang ◽  
Yi Wang ◽  
Ming-Yang Hao ◽  
Yujun Qin ◽  
Li-Min Fu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Charge Recombination ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model ◽  
Recombination Dynamics

Optical Bias Enhanced Transient Photoconductivity in a-Si:H

1989 ◽  
Vol 149 ◽  
Author(s):  
Xing Chen ◽  
Chen-Yu Tai
Keyword(s):  
Room Temperature ◽  
Decay Constant ◽  
Experimental Result ◽  
Density Of State ◽  
Transient Photocurrent ◽  
Transient Photoconductivity ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model ◽  
Bias Level

ABSTRACTOptical bias enhancement in transient photocurrent, by a factor of more than 10, is observed in a-Si:H films. The transient photocurrent is found to decay exponentially shortly after the light pulse is turned off. The exponential decay constant of the transient current is found to be proportional to (optical bias level)−0.38 at room temperature. A theory based on the multiple trapping model is developed to explain the experimental result. This effect is applied to study the density of state of the sample as well as the process of charge recombination.

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