scholarly journals Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors

2020 ◽  
Vol 66 (5 Sept-Oct) ◽  
pp. 643
Author(s):  
F. Serdouk ◽  
A. Boumali ◽  
A. Makhlouf ◽  
M.L. Benkhedi
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Time Of Flight ◽  
Amorphous Semiconductors ◽  
Charge Carrier Transport ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model ◽  
A Current ◽  
Photo Current

This paper is devoted to investigating the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. For this, we at first modified the multi–trapping model (MTM) of charge carriers in amorphous semiconductors from time-of-flight (TOF) transient photo-current in the framework of the q-derivative formalism, and then, we have constructed, our simulated current by using a method based on the Laplace method. This method is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion.

scholarly journals Localised States in Microcrystalline Silicon Photovoltaic Structures Studied by Post-Transit Time-of-Flight Spectroscopy

2003 ◽  
Vol 762 ◽  
Author(s):  
Steve Reynolds ◽  
Vladimir Smirnov ◽  
Charlie Main ◽  
Reinhard Carius ◽  
Friedhelm Finger
Keyword(s):  
Transit Time ◽  
Carrier Transport ◽  
Time Of Flight ◽  
Microcrystalline Silicon ◽  
Mobility Edge ◽  
Cell Structures ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Localised States ◽  
Time Of Flight Spectroscopy

AbstractPost-transit time-of-flight spectroscopy has been used to study the density of states distribution in hot-wire CVD microcrystalline silicon pin solar cell structures. For an absorber layer Raman scattering intensity ratio ICRS of 0.4 or less, behaviour consistent with multiple-trapping carrier transport is observed and may be interpreted in terms of a conduction-band tail of some 18 meV slope plus a broad defect bump of order 1017 cm-3 centered at 0.55 eV relative to the mobility edge. As ICRS is increased beyond 0.4, the temperature-dependence of the photocurrent transient becomes inconsistent with multiple-trapping and above 0.6 the decays are almost temperature-independent. By comparing data taken at 300 K, it may be inferred from the multiple-trapping model that localised states between 0.35 and 0.5 eV are associated with the presence of columns or clusters of nanocrystals and those deeper than 0.5 eV with the amorphous tissue. Results are compared with previous work on coplanar and sandwich structures.

Multiple-Trapping Model with Meyer-Neldel Effect and Field-Dependent Effects: Time-Of-Flight Simulations for a-Si:H

2005 ◽  
Vol 862 ◽  
Author(s):  
Jesse Maassen ◽  
Arthur Yelon ◽  
Louis-André Hamel ◽  
Wen Chao Chen
Keyword(s):  
Experimental Data ◽  
Monte Carlo ◽  
Carrier Transport ◽  
Localized States ◽  
Combined Model ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Field Dependent ◽  
Trapping Model ◽  
Flight Simulations

AbstractWe have included both the Meyer-Neldel rule and field assisted detrapping in the multiple-trapping model, assuming exponential band tails of localized states. Monte Carlo simulations with fixed parameters provide transient currents and comparison of calculated and measured mobility, μ(T,F), and pre-transit dispersion parameter, α1(T,F), which are presented for temperatures ranging from 25 K to 333 K and fields from 20 kV/cm to 400 kV/cm. We observe that the values of μ1(T,F) and α(T,F) are improved with this combined model. Although this model provides satisfactory results for carrier transport for all temperature and field, differences in experimental data causes deviation of simulated results from experiment.

Sign in / Sign up

Export Citation Format

Share Document