Magnetic field-induced metal-insulator transition in InP: new result at very low temperatures

1984 ◽  
Vol 17 (16) ◽  
pp. L411-L416 ◽  
Author(s):  
G Biskupski ◽  
H Dubois ◽  
J L Wojkiewicz ◽  
A Briggs ◽  
G Remenyi
Keyword(s):  
Magnetic Field ◽  
Low Temperatures ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Magnetic-field induced metal-insulator transition in InSb and Hg0.79Cd0.21Te at very low temperatures

1986 ◽  
Vol 60 (10) ◽  
pp. 817-820 ◽  
Author(s):  
M. Shayegan ◽  
V.J. Goldman ◽  
H.D. Drew ◽  
N.A. Fortune ◽  
J.S. Brooks
Keyword(s):  
Magnetic Field ◽  
Low Temperatures ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Magnetoresistance of Ge-Si Whiskers in the Vicinity to Metal– Insulator Transition

2019 ◽  
Vol 19 (2) ◽  
pp. 130-133
Author(s):  
A.A. Druzhinin ◽  
I.P. Ostrovskii ◽  
Yu.M. Khoverko ◽  
N.S. Liakh-Kaguy
Keyword(s):  
Magnetic Field ◽  
Low Temperatures ◽  
Insulator Transition ◽  
Electron Interaction ◽  
Exponential Dependence ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Germanium Content ◽  
Acceptor Concentration ◽  
The Magnetic Field

The magnetoresistance of GeхSi1-х (x = 0.002¸   0.11) whiskers with an acceptor concentration (Na = 3x1018¸   2.1019 cm-3) near the metal-insulator transition (MIT) was studied at low temperatures (4.2 - 77)K in magnetic fields up to 14 T. It is shown that at 4.2 K the magnetoresistance of the Ge-Si whiskers on thedielectric side of the MIT is quadratic, while the magnetoresistance of the crystals on the metal side of the MIThas an exponential dependence on the magnetic field. In the samples in the immediate vicinity to the MIT on thedielectric side, negative magnetoresistance was detected, whereas in metal samples with a high germaniumcontent (x = 11 at.%) an anomalous positive magnetoresistance occurs. The resulting anomalous dependences arerespectively explained by the conductivity with respect to the delocalized A+ states of the upper Hubbard bandand the increase in the electron-electron interaction in Ge-Si whiskers at increasing germanium content.

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