Fractional transport properties of classical particles in quasi-periodic potentials

We study the transport properties of classical particles in the ballistic regime trapped in a two-dimensional channel with dephased ripple boundaries. By taking into account small ripple amplitudes, an analytical approximate expression for the classical resistivity is obtained. We show that the resistivity can be increased considerably by dephasing the walls of the channel. Our results are compared with those obtained for a channel composed of flat and sinusoidal boundaries.

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Transport properties of a Wigner crystal in one- and two-dimensional asymmetric periodic potentials: Wigner crystal diode

Physical Review B ◽

10.1103/physrevb.99.155416 ◽

2019 ◽

Vol 99 (15) ◽

Cited By ~ 4

Author(s):

Mikhail Y. Zakharov ◽

Denis Demidov ◽

Dima L. Shepelyansky

Keyword(s):

Transport Properties ◽

Wigner Crystal ◽

Two Dimensional ◽

Periodic Potentials ◽

Crystal Diode

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Spectroscopic Diagnostics of Tokamaks

International Astronomical Union Colloquium ◽

10.1017/s0252921100107638 ◽

1988 ◽

Vol 102 ◽

pp. 165-174

Author(s):

C. de Michelis

Keyword(s):

Transport Properties ◽

Power Losses ◽

Spectroscopic Diagnostics ◽

Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

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Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088816 ◽

1991 ◽

Vol 49 ◽

pp. 900-901 ◽

Cited By ~ 1

Author(s):

Alain Claverie ◽

Zuzanna Liliental-Weber

Keyword(s):

Transport Properties ◽

Layer Thickness ◽

Growth Temperature ◽

Low Temperatures ◽

Lattice Parameter ◽

Crystalline Quality ◽

Insulating Properties ◽

Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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