CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. ConventionalI-Vand Norde’s methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.
The nanostructured ZnO film was prepared on a texturized Si wafer by a simple sol–gel method to fabricate n-ZnO/p-Si heterojunction photoelectric device. The novel sol–gel method is cheap and convenient. The structural, optical and electrical properties of the nanostructured ZnO film were studied by XRD, SEM, XPS, PL, UV–Vis spectrophotometer and Hall effect measurement. The current–voltage (I–V) curve of nanostructured ZnO/p-Si heterojunction device shows good rectifying behavior. Good photoelectric behavior is obtained.
Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes