Characterization of Nanostructured n-ZnO/p-Si Heterojunction Prepared by a Simple Sol–Gel Method

The nanostructured ZnO film was prepared on a texturized Si wafer by a simple sol–gel method to fabricate n-ZnO/p-Si heterojunction photoelectric device. The novel sol–gel method is cheap and convenient. The structural, optical and electrical properties of the nanostructured ZnO film were studied by XRD, SEM, XPS, PL, UV–Vis spectrophotometer and Hall effect measurement. The current–voltage (I–V) curve of nanostructured ZnO/p-Si heterojunction device shows good rectifying behavior. Good photoelectric behavior is obtained.

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Preparation and Optoelectrical Properties of p-CuO/n-Si Heterojunction by a Simple Sol–Gel Method

International Journal of Nanoscience ◽

10.1142/s0219581x17500132 ◽

2017 ◽

Vol 16 (05n06) ◽

pp. 1750013 ◽

Cited By ~ 2

Author(s):

Bo He ◽

Jing Xu ◽

HuanPo Ning ◽

Lei Zhao ◽

HuaiZhong Xing ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Sol Gel ◽

Hall Effect Measurement ◽

The Novel ◽

X Ray Diffraction ◽

Photoelectric Device ◽

Gel Method ◽

X Ray ◽

Sol Gel Method ◽

Si Wafer

The Cuprous oxide (CuO) thin film was prepared on texturized Si wafer by a simple sol–gel method to fabricate p-CuO/n-Si heterojunction photoelectric device. The novel sol–gel method is very cheap and convenient. The structural, optical and electrical properties of the CuO film were studied by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), X-ray photoelectron spectroscopy (XPS), UV–Vis spectrophotometer and Hall effect measurement. A good nonlinear rectifying behavior is obtained for the p-CuO/n-Si heterojunction. Under reverse bias, good photoelectric behavior is obtained.

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Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

The Scientific World JOURNAL ◽

10.1155/2013/126982 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 6

Author(s):

S. Çetinkaya ◽

H. A. Çetinkara ◽

F. Bayansal ◽

S. Kahraman

Keyword(s):

Schottky Diodes ◽

Sol Gel ◽

Sem Images ◽

Gel Method ◽

Sol Gel Method ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Cbd Method ◽

Xrd Techniques

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. ConventionalI-Vand Norde’s methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.

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