Влияние условий осаждения из паров металлоорганических соединений на получение эпитаксиальных слоев n-CdTe с использованием изопропилиодида

The dependence of iodine incorporation in CdTe layers on the deposition conditions during metalorganic vapor phase epitaxy is investigated. The growth of the layers was carried out from dimethylcadmium and diethyltellurium in the hydrogen flow in a vertical reactor with a hot wall condition at a total pressure of 20 kPa. The total iodine concentration was determined by secondary ion mass spectrometry, the electrically active concentration was determined from the Hall effect measurement. The iodine incorporation depends on the crystallographic orientation of the substrate (were studied (100), (310), (111)A, (111)B, (211)A and (211)B), the concentration of the doping precursor (flux range 5·10–8–3·10–6 mol/min), the mole ratio of organometallic compounds (DMCd/DETe=0.25–4), growth temperature (335–390°C) and the walls of the reactor above the pedestal (hot wall zone 290–320°C). The total iodine concentration reached 5·1018 cm–3 and the activation efficiency was ~4 %. After thermal annealing in cadmium vapor at 500°C the activation efficiency was ~100 %.

Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach

In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (010) β-Ga2O3 thin film grown by the metalorganic vapor phase epitaxy (MOVPE). The model reveals that a hidden parameter, the Si supplied per nm (mol/nm), has a dominant influence on the doping process compared with other process parameters. An empirical relation is concluded from this model to estimate the doping level of the grown film with the Si supplied per nm (mol/nm) as the primary variable for both (100) and (010) β-Ga2O3 thin film. The outcome of the work indicates the similarity between the doping behavior of (100) and (010) β-Ga2O3 thin film via MOVPE and the generality of the results to different deposition systems.

High electron mobility in nearly-dislocation-free hexagonal InN

We demonstrate a recorded directed-probed electron mobility of ~4850 cm2/Vs in nearly-dislocation-free hexagonal InN at room temperature by Hall-effect measurement. Those extremely high quality InN are achieved through droplet-assisted epitaxy on GaN/sapphire template by molecular beam epitaxy. They behave as crystals with diameter of several micrometers, being confirmed to be nearly free of threading dislocation by transmission electron microscopy. The achievement of such high mobility InN provides promising opportunities for fabricating high speed electronic device.

Synthesis and Characterization of α-Fe2O3 Nanoparticles Prepared by PLD at Different Laser Energies

In this paper, ferric oxide nanoparticles) Fe2O3 NPs( were synthesized directly on a quartz substrate in vacuum by pulse laser deposition technique using Nd:YAG laser at different energies (171, 201,363 mJ/pulse). The slides were then heated to 700o C for 1 hour. The structural, optical, morphological, and electrical properties were studied. The optical properties indicated that the prepared thin films have an energy gap ranging from 2.28 to 2.04 eV. The XRD results showed no lattice impurities for other iron oxide phases, confirming that all particles were transformed into the α-Fe2O3 phase during the heating process. The AFM results indicated the dependence of nanoparticles size on the laser energy. As the laser energy increased, the average grain size increased from 72.6 nm to 79.02 nm. Hall effect measurement indicated that the film was an n-type semiconductor.

Dominant acceptors in Li doped, magnetron deposited Cu2O films

Cu2O films deposited by reactive magnetron sputtering with varying Li concentrations have been investigated by a combination of temperature-dependent Hall effect measurement and thermal admittance spectroscopy. As measured by secondary ion mass spectrometry, Li concentrations up to 5x1020 Li/cm3 have been achieved. Li doping significantly alters the electrical properties of Cu2O and increases hole concentration at room temperature for higher Li concentrations. Moreover, the apparent activation energy for the dominant acceptors decreases from around 0.2 eV for undoped or lightly doped Cu2O down to as low as 0.05 eV for higher Li concentrations.

Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide

Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.

Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application

In this study, a radio-frequency magnetron sputter system was used to deposit Al2O3 doped ZnO (AZO) thin films at room temperature, and the soda lime glass (SLG) substrates were placed at different zones relative to the center of the sample holder under the target. The samples were then analyzed using an X-ray diffractometer, Hall-effect measurement system, UV-visible spectrophotometer, and X-ray photoelectron spectroscopy. It was found that the electrical, structural, and optical properties of AZO films strongly depend on the target racetrack. The AZO thin film grown at a location outside the racetrack not only has the most suitable figure of merit for transparent conductive films, but also retains the least residual stress, which makes it the most suitable candidate for use as a CZTSe transparent conductive layer. When applied to CZTSe solar cells, the photoelectric efficiency is 3.56%.

Physical properties of carbon nanowalls synthesized by the ICP-PECVD method vs. the growth time

Investigation of the physical properties of carbon nanowall (CNW) films is carried out in correlation with the growth time. The structural, electronic, optical and electrical properties of CNW films are investigated using electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, UV–Vis spectroscopy, Hall Effect measurement system, Four Point Probing system, and thermoelectric measurements. Shorter growth time results in thinner CNW films with a densely spaced labyrinth structure, while a longer growth time results in thicker CNW films with a petal structure. These changes in morphology further lead to changes in the structural, optical, and electrical properties of the CNW.

Structural, electrical and magnetic properties of substituted pyrochlore oxide nanoparticles synthesized by the co-precipitation method

Five substituted pyrochlore nanooxides such as Nd1.9Ho0.1Zr1.8Ce0.2O7, La1.95Ce0.05Zr0.29Ce1.71O7, Y1.79Pr0.21Ru1.99Pr0.01O7, Dy1.9Yb0.1Mn1.93Cu0.07O7 and Dy1.99Sr0.01Sn2O7 were synthesized by coprecipitation method. These precursors were monitored by thermal studies (TGA-DTA). The prepared nanosized substituted pyrochlore oxides were characterized by EDS, XRD, SEM, TEM, d. c. electrical conductivity, Thermoelectric power, Hall effect measurement, dielectric properties and magnetization measurements. XRD confirmed the formation of a single phase crystalline substituted pyrochlores with a cubic nature of nanoparticles. All substituted compounds were adopted a stable pyrochlore structure with rA3+/rB4+ = 1.395 except La1.95Ce0.05Zr0.29Ce1.71O7 compound, which has rA3+/rB4+ = 1.175 indicate disorder pyrochlore structure (i.e. fluorite structure). The temperature dependence of d. c. electrical conductivity for all substituted pyrochlores exhibits two distinct slopes with a break. This discontinuity can be attributed to extrinsic to intrinsic semiconducting properties. The thermoelectric power and Hall effect measurements for all compounds were confirmed the p-type semiconductivity except Y1.79Pr0.21Ru1.99Pr0.01O7 compound and which showed n-type semiconductivity. The dielectric constant (ε’) and dielectric loss (tan δ) i. e dissipation factor decreases with an increase in frequencies and reaching constant at particular frequencies. The applied field dependence of magnetization curve at room temperature (300 K) for Nd1.9Ho0.1Zr1.8Ce0.2O7, Y1.79Pr0.21Ru1.99Pr0.01O7 and Dy1.9Yb0.1Mn1.93Cu0.07O7, showed hysteresis loop with a small kink around the origin and which can be attributed to small but definite ferromagnetic ordering along with significant paramagnetic and superparamagnetic components. The magnetization at 2K showed a clear hysteresis loop for Dy1.9Yb0.1Mn1.93Cu0.07O7 and Dy1.99Sr0.01Sn2O7 pyrochlores are soft (weak) ferromagnets.