Amorphous silicon EPID calibration for dosimetric applications: comparison of a method based on Monte Carlo prediction of response with existing techniques

2007 ◽  
Vol 52 (12) ◽  
pp. 3351-3368 ◽  
Author(s):  
L Parent ◽  
A L Fielding ◽  
D R Dance ◽  
J Seco ◽  
P M Evans
Keyword(s):  
Monte Carlo ◽  
Amorphous Silicon ◽  
Prediction Of Response ◽  
Monte Carlo Prediction

Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo

2011 ◽  
Vol 55 (1) ◽  
pp. 25-28 ◽  
Author(s):  
Ignacio Martin-Bragado ◽  
Nikolas Zographos
Keyword(s):  
Monte Carlo ◽  
Amorphous Silicon ◽  
Kinetic Monte Carlo ◽  
Boron Diffusion

Monte Carlo Simulations of Defect Relaxation in Amorphous Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
Thomas Unold ◽  
Howard M. Branz
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Amorphous Silicon ◽  
Time Dependent ◽  
Memory Model ◽  
Filling Time ◽  
Defect Filling ◽  
Defect Relaxation ◽  
Structural Memory

ABSTRACTThe structural memory model of slow defect relaxation in a-Si:H is extended to the limit of long defect filling times. The model was proposed in order to explain unusual, defect filling-time dependent capacitance transients that were observed for short defect filling times. For long defect filling pulses however, the experiments show normal charge emission transients that saturate into filling-time independent transients. We present two possibilities for explaining the approach to saturation within the structural memory model. Results of Monte Carlo simulations of the models are discussed.

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