In-Plane Optical Anisotropy of a -Plane GaN Film on r -Plane Sapphire Grown by Metal Organic Chemical vapour Deposition

2012 ◽  
Vol 29 (10) ◽  
pp. 107801 ◽  
Author(s):  
Yu Ding ◽  
Bin Liu ◽  
Tao Tao ◽  
Yi Li ◽  
Zhao Zhang ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Optical Anisotropy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Gan Film

Orders of Magnitude Reduction in Threading Dislocations in ZnO Grown on Facet-Controlled GaN

2006 ◽  
Vol 957 ◽  
Author(s):  
Soo Jin Chua ◽  
Hai Long Zhou ◽  
Hui PAN ◽  
Thomas Osipowicz
Keyword(s):  
Cross Section ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Threading Dislocations ◽  
Zno Film ◽  
Metal Organic ◽  
Sio2 Mask ◽  
Gan Film

ABSTRACTZnO is grown by chemical vapour deposition on {1 1 -2 2} GaN planes formed by epitaxial layer overgrowth. Window stripes in a SiO2 mask are oriented in the <1 -1 0 0> direction of the GaN film. Triangular GaN ridge are formed during ELO growth by metal organic chemical vapour deposition. A flat (0 0 0 1) ZnO plane is grown on each triangular cross-section ridge and it is found that the ZnO film has dislocation density reduced by two orders of magnitude compared to that of the GaN substrate.

Vapour-pressure data for adducts of dimethylzinc: sources and dopants for zinc in metal–organic chemical vapour deposition

1993 ◽  
Vol 3 (7) ◽  
pp. 739-742 ◽  
Author(s):  
Paul O'Brien ◽  
John R. Walsh ◽  
Anthony C. Jones ◽  
Simon A. Rushworth ◽  
Clive Meaton
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Pressure Data ◽  
Metal Organic
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